Data Sheet

FDC638APZ P-Channel 2.5V PowerTrench
®
Specified MOSFET
www.onsemi.com
3
Typical Characteristics T
J
= 25°C unless otherwise noted
Figure 1.
01234
0
5
10
15
20
V
GS
= -4.5V
V
GS
= -3.5V
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -2.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
GS
= -2.0V
V
GS
= -1.5V
V
GS
= -3.0V
On-Region Characteristics Figure 2.
0 5 10 15 20
0.6
1.0
1.4
1.8
2.2
V
GS
= -3.5V
V
GS
= -2.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-I
D
, DRAIN CURRENT(A)
V
GS
= -3.0V
V
GS
= -2.0V
V
GS
= -4.5V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
=-4.5A
V
GS
= -4.5V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
40
80
120
160
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -2.2A
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
O n -R es i s t an ce v s G a t e to
Source Voltage
Figure 5. Transfer Characteristics
1.0 1.5 2.0 2.5 3.0
0
5
10
15
20
V
DD
= -5V
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
-I
D
, DRAIN CURRENT (A)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.0001
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-I
S
, REVERSE DRAIN CURRENT (A)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra i n D io d e
Forward Voltage vs Source Current