Data Sheet

FDC638APZ P-Channel 2.5V PowerTrench
®
Specified MOSFET
www.onsemi.com
4
Figure 7.
024681012
0
1
2
3
4
5
I
D
= -4.5A
V
DD
= -15V
V
DD
= -5V
-V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE(nC)
V
DD
= -10V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
70
2000
20
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0 5 10 15 20
1E-5
1E-4
1E-3
0.01
0.1
1
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-I
g
, GATE LEAKAGE CURRENT(mA)
-V
GS
, GATE TO SOURCE VOLTAGE(V)
Gate Leakage Current vs Gate to
Source Voltage
Figure 10.
0.1 1 10
0.01
0.1
1
10
100
50
100ms
10us
1s
DC
10ms
1ms
100us
r
DS(on)
LIMIT
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
O
C
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
For w a r d Bias S a f e
Operating Area
Figure 11. Single Pulse Maximum Power Di
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
10
20
30
40
50
SINGLE PULSE
R
θJA
= 156
o
C/W
T
A
=25
o
C
P
(PK)
,PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
SINGLE PULSE
ssipation Figure 12. Transient Thermal Response Curve
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.001
0.01
0.1
1
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, Z
θJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
J
= 25°C unless otherwise noted