Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsFETsMOSFET 1 P-channel 800 m

2003 Semiconductor Components Industries, LLC.

October-2017, Rev. 5

Publication Order Number:

FDC654P /D

FDC654P

Single P-Channel Logic Level PowerTrench



MOSFET

General Description

This P-Channel Logic Level MOSFET is

produced using ON Semiconductor’s advanced

PowerTrench process. It has been optimized for

battery power management applications.

Applications

• Battery management

• Load switch

• Battery protection

Features

• –3.6 A, –30 V. R

DS(ON)

= 75 mΩ @ V

= –10 V

DS(ON)

= 125 mΩ @ V

= –4.5 V

• Low gate charge (6.2 nC typical)

• High performance trench technology for extremely

low R

DS(ON)

SuperSOT -6

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –30 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1a) –3.6 A

– Pulsed –10

Maximum Power Dissipation (Note 1a) 1.6 W P

(Note 1b)

0.8

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 78

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 30

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.654 FDC654P 7’’ 8mm 3000 units

FDC654P

Summary of content (5 pages)

PAGE 1
FDC654P FDC654P Single P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced PowerTrench process. It has been optimized for battery power management applications. Features • –3.6 A, –30 V. Applications RDS(ON) = 75 mΩ @ VGS = –10 V RDS(ON) = 125 mΩ @ VGS = –4.5 V • Battery management • Low gate charge (6.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –22 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C VDS = –24 V, VGS = 0 V –1 IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics –30 V µA (N
PAGE 3
FDC654P Typical Characteristics 15 2 -6.0V -5.0V V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -10V -4.5V 12 9 -4.0V 6 -3.5V 3 -3.0V 0 1.8 VGS = -3.5V 1.6 1.4 -4.0V 1.2 -4.5V 1 -5.0V -6.0V 0.8 -7.0V 0.4 0 1 2 3 4 5 0 3 6 -VDS, DRAIN TO SOURCE VOLTAGE (V) 12 15 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.3 ID = -3.
PAGE 4
FDC654P Typical Characteristics 400 VDS = -5V ID = -3.6A f = 1 MHz VGS = 0 V -10V CISS 8 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 300 200 COSS 100 CRSS 0 0 0 1 2 3 4 5 6 7 0 6 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 18 24 30 Figure 8. Capacitance Characteristics.
PAGE 5
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