Data Sheet

April 2015
FDC8878 N-Channel PowerTrench
®
MOSFET
©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDC8878 Rev.1.4
FDC8878
N-Channel PowerTrench
®
MOSFET
30 V, 8.0 A, 16 mΩ
Features
 Max r
DS(on)
= 16 mΩ at V
GS
= 10 V, I
D
= 8.0 A
 Max r
DS(on)
= 18 mΩ at V
GS
= 4.5 V, I
D
= 7.5 A
 High performance trench technology for extremely low r
DS(on)
 Fast switching speed
 RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
®
process that has
been optimized for
r
DS(on)
, switching performance.
Applications
 Primary Switch
SuperSOT
TM
-6
G
S
D
D
D
D
Pin 1
1
2
3
6
5
4
D
D
G
D
D
S
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage (Note 3) ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 8.0
A -Continuous T
A
= 25 °C (Note 1a) 8.0
-Pulsed 32
P
D
Power Dissipation (Note 1a) 1.6
W
Power Dissipation (Note 1b) 0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 30
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 78
Device Marking Device Package Reel Size Tape Width Quantity
.888 FDC8878 SSOT-6 7 ’’ 8 mm 3000 units