Data Sheet

FDC8878 N-Channel PowerTrench
®
MOSFET
©2012 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FDC8878 Rev.1.4
Typical Characteristics T
J
= 25°C unless otherwise noted
Figure 1.
0 0.3 0.6 0.9 1.2 1.5
0
8
16
24
32
V
GS
= 3.5 V
V
GS
= 4.5 V
V
GS
= 10 V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 3 V
V
GS
= 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
On Region Characteristics Figure 2.
0 8 16 24 32
0.5
1.0
1.5
2.0
2.5
V
GS
= 6 V
V
GS
= 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5 V
V
GS
= 3 V
V
GS
= 10 V
N o rmali z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
Fi gu r e 3 . No rm a l i z e d O n Re s i s ta nc e
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= 8 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
246810
0
10
20
30
40
50
T
J
= 125
o
C
I
D
= 8 A
T
J
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
O n -R es is t an ce v s G at e to
Source Voltage
Figure 5. Transfer Characteristics
1234
0
8
16
24
32
T
J
= 150
o
C
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
T
J
= -55
o
C
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra in D io d e
Forward Voltage vs Source Current