Data Sheet

April 2015
FDD770N15A — N-Channel PowerTrench
®
MOSFET
©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2
www.fairchildsemi.com
1
FDD770N15A
N-Channel PowerTrench
®
MOSFET
150 V, 18 A, 77 mΩ
Features
•R
DS(on)
= 61 mΩ ( Typ.) @ V
GS
= 10 V, I
D
= 12 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R
DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench
®
process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• DC to DC Converters
• Synchronous Rectification for Server / Telecom PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
•Off-line UPS
D-PAK
G
S
D
G
S
D
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FDD770N15A Unit
V
DSS
Drain to Source Voltage 150 V
V
GSS
Gate to Source Voltage
- DC ±20
V
- AC (f > 1 Hz) ±30
I
D
Drain Current
- Continuous (T
C
= 25
o
C, Silicon Limited) 18
A
- Continuous (T
C
= 100
o
C, Silicon Limited) 11.4
I
DM
Drain Current - Pulsed (Note 1) 36 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 31.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 56.8 W
- Derate Above 25
o
C0.46W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter
FDD770N15A
Unit
R
θJC
Thermal Resistance, Junction to Case, Max. 2.2
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max. 87