Data Sheet

©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2
www.fairchildsemi.com
2
FDD770N15A — N-Channel PowerTrench
®
MOSFET
Package Marking and Ordering Information
Electrical Characteristics T
C
= 25
o
C unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDD770N15A FDD770N15A DPAK Tape and Reel 330 mm 16 mm 2500 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V 150 - - V
ΔBV
DSS
/ ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, Referenced to 25
o
C - 0.0824 - V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 120 V, V
GS
= 0 V - - 1
μA
V
DS
= 120 V, V
GS
= 0 V, T
C
= 125
o
C - - 500
I
GSS
Gate to Source Leakage Current V
GS
= ±20 V, V
DS
= 0 V - - ±100 nA
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA2.0-4.0V
R
DS(on)
Static Drain to Source On Resistance V
GS
= 10 V, I
D
= 12 A - 61 77 mΩ
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 12 A
-20-S
C
iss
Input Capacitance
V
DS
= 75 V, V
GS
= 0 V,
f = 1 MHz
- 575 765 pF
C
oss
Output Capacitance - 64 85 pF
C
rss
Reverse Transfer Capacitance - 3.9 6 pF
C
oss(er)
Energy Related Output Capacitance V
DS
= 75 V, V
GS
= 0 V - 113 - pF
Q
g(tot)
Total Gate Charge at 10V
V
DS
= 75 V, I
D
= 12 A,
V
GS
= 10 V
(Note 4)
-8.411nC
Q
gs
Gate to Source Gate Charge - 2.7 - nC
Q
gd
Gate to Drain “Miller” Charge - 1.8 - nC
V
plateau
Gate Plateau Volatge - 5.7 - V
Q
sync
Total Gate Charge Sync.
V
DS
= 0 V, I
D
= 6 A
-6.9-nC
Q
oss
Output Charge V
DS
= 37.5 V, V
GS
= 0 V - 14 - nC
ESR Equivalent Series Resistance (G-S) f = 1 MHz - 0.5 - Ω
t
d(on)
Turn-On Delay Time
V
DD
= 75 V, I
D
= 12 A,
V
GS
= 10 V, R
G
= 4.7 Ω
(Note 4)
-10.330.6ns
t
r
Turn-On Rise Time - 3.1 16.2 ns
t
d(off)
Turn-Off Delay Time - 15.8 41.6 ns
t
f
Turn-Off Fall Time - 2.8 15.6 ns
I
S
Maximum Continuous Drain to Source Diode Forward Current - - 18 A
I
SM
Maximum Pulsed Drain to Source Diode Forward Current - - 36 A
V
SD
Drain to Source Diode Forward Voltage V
GS
= 0 V, I
SD
= 12 A - - 1.25 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, V
DD
= 75 V, I
SD
= 12 A,
dI
F
/dt = 100 A/μs
- 56.4 - ns
Q
rr
Reverse Recovery Charge - 109 - nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, I
AS
= 4.6 A, starting T
J
= 25°C.
3. I
SD
≤ 12 A, di/dt ≤ 200 A/μs, V
DD
≤ BV
DSS
, starting T
J
= 25°C.
4. Essentially independent of operating temperature typical characteristics.