Data Sheet

©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2
www.fairchildsemi.com
4
FDD770N15A — N-Channel PowerTrench
®
MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive
Switching Capability
-80 -40 0 40 80 120 160
0.90
0.95
1.00
1.05
1.10
*Notes:
1. V
GS
= 0V
2. I
D
= 250μA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-80 -40 0 40 80 120 160
0.4
0.8
1.2
1.6
2.0
2.4
*Notes:
1. V
GS
= 10V
2. I
D
= 12A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
25 50 75 100 125 150
0
5
10
15
20
R
θJC
= 2.2
o
C/W
V
GS
= 10V
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
1 10 100 200
0.01
0.1
1
10
60
100μs
1ms
10ms
100ms
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
SINGLE PULSE
T
C
= 25
o
C
T
J
= 150
o
C
R
θJC
= 2.2
o
C/W
DC
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
E
OSS
, [μJ]
V
DS
, Drain to Source Voltage [V]
0.001 0.01 0.1 1 10
1
10
20
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)