Data Sheet
FDG8842CZ Complementary PowerTrench
®
MOSFET
www.onsemi.com
2
Electrical Characteristics T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown
Voltage
I
D
= 250μA, V
GS
= 0V
I
D
= –250μA, V
GS
= 0V
Q1
Q2
30
–25
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250μA, referenced to 25°C
I
D
= –250μA, referenced to 25°C
Q1
Q2
25
–21
mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V, V
GS
= 0V
V
DS
= –20V, V
GS
= 0V
Q1
Q2
1
–1
μA
I
GSS
Gate to Source Leakage Current
V
GS
= ±12V, V
DS
= 0V
V
GS
= –8V, V
DS
= 0V
Q1
Q2
±10
–100
μA
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250μA
V
GS
= V
DS
, I
D
= –250μA
Q1
Q2
0.65
–0.65
1.0
–0.8
1.5
–1.5
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250μA, referenced to 25°C
I
D
= –250μA, referenced to 25°C
Q1
Q2
–3.0
1.8
mV/°C
r
DS(on)
Static Drain to Source On
Resistance
V
GS
= 4.5V, I
D
= 0.75A
V
GS
= 2.7V, I
D
= 0.67A
V
GS
= 4.5V, I
D
= 0.75A ,T
J
= 125°C
Q1
0.25
0.29
0.36
0.4
0.5
0.6
Ω
V
GS
= –4.5V, I
D
= –0.41A
V
GS
= –2.7V, I
D
= –0.25A
V
GS
= –4.5V, I
D
= –0.41A ,T
J
= 125°C
Q2
0.87
1.20
1.22
1.1
1.5
1.9
g
FS
Forward Transconductance
V
DS
= 5V, I
D
= 0.75A
V
DS
= –5V, I
D
= –0.41A
Q1
Q2
3
8
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
V
DS
= 10V, V
GS
= 0V, f= 1MHZ
Q2
V
DS
= –10V, V
GS
= 0V, f= 1MHZ
Q1
Q2
90
70
120
100
pF
C
oss
Output Capacitance
Q1
Q2
20
30
30
40
pF
C
rss
Reverse Transfer Capacitance
Q1
Q2
15
15
25
25
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
Q1
V
DD
= 5V, I
D
= 0.5A,
V
GS
= 4.5V,R
GEN
= 6Ω
Q2
V
DD
= –5V, I
D
= –0.5A,
V
GS
= –4.5V,R
GEN
= 6Ω
Q1
Q2
4
6
10
12
ns
t
r
Rise Time
Q1
Q2
1
16
10
29
ns
t
d(off)
Turn-Off Delay Time
Q1
Q2
9
35
18
56
ns
t
f
Fall Time
Q1
Q2
1
40
10
64
ns
Q
g
Total Gate Charge
Q1
V
GS
=4.5V, V
DD
= 5V, I
D
= 0.75A
Q2
V
GS
= –4.5V, V
DD
= –5V, I
D
= –0.41A
Q1
Q2
1.03
1.20
1.44
1.68
nC
Q
gs
Gate to Source Charge
Q1
Q2
0.29
0.31
nC
Q
gd
Gate to Drain “Miller” Charge
Q1
Q2
0.17
0.22
nC
(note 2)