Data Sheet

FDG8842CZ Complementary PowerTrench
®
MOSFET
www.onsemi.com
4
Typical Characteristics (Q1 N-Channel)T
J
= 25°C unless otherwise noted
Figure 1.
0.0 0.5 1.0 1.5 2.0
0.00
0.44
0.88
1.32
1.76
2.20
V
GS
= 1.5V
V
GS
= 2.0V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
V
GS
= 2.7V
V
GS
=1.8V
V
GS
= 4.5V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0.00 0.44 0.88 1.32 1.76 2.20
0.6
1.0
1.4
1.8
2.2
2.6
V
GS
= 4.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT(A)
V
GS
= 2.7V
V
GS
= 2.0V
V
GS
= 1.8V
V
GS
= 3.5V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= 0.75A
V
GS
= 4.5V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
12345
0.2
0.4
0.6
0.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
=0.38A
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(Ω)
V
GS
, GATE TO SOURCE VOLTAGE (V)
O n -R es i s t an ce v s G a t e to
Source Voltage
Figure 5. Transfer Characteristics
0.0 0.5 1.0 1.5 2.0 2.5
0.00
0.44
0.88
1.32
1.76
2.20
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
VDD = 5V
Figure 6.
0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
2
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra i n D io d e
Forward Voltage vs Source Current