Data Sheet

FDG8842CZ Complementary PowerTrench
®
MOSFET
www.onsemi.com
5
Figure 7.
0.00.20.40.60.81.01.21.4
0
1
2
3
4
5
V
DD
= 10V
V
DD
= 15V
V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE(nC)
V
DD
= 5V
ID = 0.22A
Gate Charge Characteristics Figure 8.
0.1 1 10
1
10
100
200
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.1 1 10 100
0.01
0.1
1
0.005
4
100μs
1ms
1s
DC
100ms
10ms
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 415
O
C/W
T
A
= 25
O
C
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
r
D
S
(
o
n
)
L
I
M
I
T
E
D
F or w ar d B i a s Sa f e
Operating Area
Figure 10.
0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
1
10
R
θJA
= 415
O
C/W
SINGLE PULSE
T
A
= 25
O
C
50
P
(PK)
, PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
Single Pulse Maximum Power
Dissipation
Figure 11. Transient Thermal Response Curve
0.0001 0.001 0.01 0.1 1 10 100 1000
0.01
0.1
1
R
θJA
= 415
o
C/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, Z
θJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
Typical Characteristics (Q1 N-Channel)T
J
= 25°C unless otherwise noted