Data Sheet

FDG8842CZ Complementary PowerTrench
®
MOSFET
www.onsemi.com
6
Typical Characteristics (Q2 P-Channel)
01234
0.0
0.3
0.6
0.9
1.2
V
GS
= -2.0V
V
GS
= -4.5V
V
GS
= -2.7V
V
GS
= -1.5V
V
GS
= -2.5V
V
GS
= -3.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. On Region Characteristics
0.0 0.3 0.6 0.9 1.2
0
1
2
3
4
5
V
GS
= -3.5V
V
GS
= -4.5V
V
GS
= -1.5V
V
GS
= -2.5V
V
GS
= -2.0V
V
GS
= -2.7V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-I
D
, DRAIN CURRENT(A)
Figure 14. Normalized on-Resistance vs Drain
Current and Gate V
oltage
Figure 15. Normalized On Resistance
vs Junction Temperature
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= -0.41A
V
GS
= -4.5V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
1
2
3
4
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
=-0.22A
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(Ω)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 16. On-Resistance vs Gate to
Source Voltage
Figure 17. Transfer Characteristics
0.5 1.0 1.5 2.0 2.5
0.0
0.2
0.4
0.6
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-I
D
, DRAIN CURRENT (A)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
= -5V
Figure 18. Source to Drain Diode
Forward Voltage vs Source Current
0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
3
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-I
S
, REVERSE DRAIN CURRENT (A)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
J
= 25°C unless otherwise noted