Data Sheet

Typical Characteristics(Q2 P-Channel) T
J
= 25°C unless otherwise noted
Figure 19. Gate Charge Characteristics
0.0 0.4 0.8 1.2 1.6
0
1
2
3
4
5
V
DD
= -10V
V
DD
= -15V
-V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE(nC)
V
DD
= -5V
ID = -0.41A
0.1 1 10
1
10
100
200
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
25
Figure 20. Capacitance vs Drain
to Source Voltage
F i g u r e 2 1 . F o r w a r d B i a s S a f e
Op
erating Area
110
0.01
0.1
1
0.3
50
3
1ms
1s
DC
100ms
10ms
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 415
o
C/W
T
A
= 25
o
C
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
r
D
S
(
o
n
)
L
I
M
I
T
ED
Figure 22. Single Pulse Maximum Power
Dissipation
0.001 0.01 0.1 1 10 100 1000
0.1
1
10
P
(PK)
, PEAK TRANSIENT POWER (W)
T
A
= 25
O
C
R
θJA
= 415
O
C/W
SINGLE PULSE
20
t, PULSE WIDTH (s)
Figure 23. Transient Thermal Response Curve
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.01
0.1
1
R
θJA
= 415
o
C/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, Z
θJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
FDG8842CZ Complementary PowerTrench
®
MOSFET
www.onsemi.com
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