Data Sheet

March 2016
FDP51N25 / FDPF51N25 — N-Channel UniFET
TM
MOSFET
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. 1.8
www.fairchildsemi.com
1
FDP51N25 / FDPF51N25
N-Channel UniFET
TM
MOSFET
250 V, 51 A, 60 mΩ
Features
•R
DS(on)
= 48 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 25.5 A
• Low Gate Charge (Typ. 55 nC)
• Low C
rss
(Typ. 63 pF)
Applications
•PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFET
TM
MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol Parameter
FDP51N25
FDPF51N25
FDPF51N25YDTU
FDPF51N25RDTU Unit
V
DSS
Drain-Source Voltage 250 V
I
D
Drain Current - Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
51
30
51*
30*
A
A
I
DM
Drain Current - Pulsed
(Note 1)
204 204*
A
V
GSS
Gate-Source voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1111 mJ
I
AR
Avalanche Current
(Note 1)
51 A
E
AR
Repetitive Avalanche Energy
(Note 1)
32 mJ
V
ISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t=0.3sec; T
C
= 25°C)
N/A 2500 V
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
- Derate Above 25° C
320
3.7
38
0.3
W
W/°C
T
J,
T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300 °C
Symbol Parameter
FDP51N25
FDPF51N25
FDPF51N25YDTU
FDPF51N25RDTU Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 0.39 3.3 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W
G
S
D
TO-220F
Y-formed
TO-220F
G
D
S
G
S
D
TO-220
G
D
S
G
S
D
TO-220F
LG-formed