Data Sheet

FDP51N25 / FDPF51N25 — N-Channel UniFET
TM
MOSFET
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. 1.8
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C
= 25°C unless otherwise noted.
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.68 mH, I
AS
= 51 A, V
DD
= 50 V, R
G
= 25 Ω, starting T
J
= 25°C.
3. I
SD
≤ 51 A, di/dt ≤ 200 A/μs, V
DD
≤ BV
DSS
, starting T
J
= 25°C.
4. Essentially independent of operating temperature typical characteristics.
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDP51N25 FDP51N25 TO-220 Tube N/A N/A 50 units
FDPF51N25 FDPF51N25 TO-220F Tube N/A N/A 50 units
FDPF51N25YDTU FDPF51N25
TO-220F
(Y-formed)
Tube N/A N/A 50 units
FDPF51N25RDTU FDPF51N25
TO-220F
(LG-formed)
Tube N/A N/A 50 units
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 μA, T
J
= 25 °C 250 -- -- V
ΔBV
DSS
/ ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, Referenced to 25°C--0.25--V/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 250 V, V
GS
= 0 V
V
DS
= 200 V, T
C
= 125°C
--
--
--
--
1
10
μA
μA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30 V, V
DS
= 0V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 μA3.0--5.0V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 25.5 A -- 0.048 0.060 Ω
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 25.5 A -- 43 -- S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
-- 2620 3410 pF
C
oss
Output Capacitance -- 530 690 pF
C
rss
Reverse Transfer Capacitance -- 63 90 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
DD
= 125 V, I
D
= 51 A,
V
GS
= 10 V, R
G
= 25 Ω
(Note 4)
-- 62 135 ns
t
r
Turn-On Rise Time -- 465 940 ns
t
d(off)
Turn-Off Delay Time -- 98 205 ns
t
f
Turn-Off Fall Time -- 130 270 ns
Q
g
Total Gate Charge V
DS
= 200 V, I
D
= 51 A,
V
GS
= 10 V
(Note 4)
-- 55 70 nC
Q
gs
Gate-Source Charge -- 16 -- nC
Q
gd
Gate-Drain Charge -- 27 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 51 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 204 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 51 A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= 51 A,
dI
F
/dt =100 A/μs
-- 178 -- ns
Q
rr
Reverse Recovery Charge -- 4.0 -- μC