Data Sheet

FDP51N25 / FDPF51N25 — N-Channel UniFET
TM
MOSFET
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. 1.8
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250
μs Pulse Test
2. T
C
= 25
o
C
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
24681012
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
* Notes :
1
. V
DS
= 40V
2.
250
μs Pulse Test
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
0 25 50 75 100 125 150
0.04
0.06
0.08
0.10
0.12
0.14
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25
o
C
R
DS(ON)
[Ω], Drain-Source On-Resistance
I
D
, Drain Current [A]
0.20.40.60.81.01.21.41.61.8
10
0
10
1
10
2
150
o
C
* Notes :
1. V
GS
= 0V
2. 250
μs Pulse Test
25
o
C
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
2000
4000
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitances [pF]
V
DS
, Drain-Source Voltage [V]
0 102030405060
0
2
4
6
8
10
12
V
DS
= 125V
V
DS
= 50V
V
DS
= 200V
* Note : I
D
= 51A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]