Data Sheet

FDP51N25 / FDPF51N25 — N-Channel UniFET
TM
MOSFET
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. 1.8
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FDP51N25 for FDPF51N25 / FDPF51N25YDTU
Figure 10. Maximum Drain Current
vs. Case Temperature
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1
. V
GS
= 0 V
2
. I
D
= 250 μA
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1
. V
GS
= 10 V
2
. I
D
= 25.5 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
100 ms
1 ms
10 μs
DC
10 ms
100 μs
Operation in This Area
is Limited by R
DS(o n)
* Notes :
1
. T
C
= 25
o
C
2
. T
J
= 150
o
C
3
. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
100 ms
1 ms
10 μs
DC
10 ms
100 μs
Operation in This Area
is Limited by R
DS(o n)
* Notes :
1
. T
C
= 25
o
C
2
. T
J
= 150
o
C
3
. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
25 50 75 100 125 150
0
10
20
30
40
50
60
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]