Data Sheet

November 2013
FDP80N06 — N-Channel UniFET
TM
MOSFET
©2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
www.fairchildsemi.com
1
Features
Description
UniFET
TM
MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Absolute Maximum Ratings T
C
= 25°C
unless otherwise noted.
FDP80N06
TO-220
G
D
S
G
S
D
N-Channel UniFET
TM
MOSFET
60 V, 80 A, 1
0 mΩ
•
R
DS(on)
= 8.5 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 40 A
•
Low Gate Charge (Typ. 57nC)
•
Low C
rss
(Typ. 145pF)
•
Fast Switching
•
Improved dv/dt Capability
•
RoHS Compliant
Thermal Characteristics
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 60 V
V
GSS
Gate to Source Voltage ±20 V
I
D
D r a i n C u r r e n t
- Continuous (T
C
= 25
o
C)
80
A
- Continuous (T
C
= 100
o
C)
65
I
DM
D r a i n C u r r e n t - P u l s e d (Note 1) 320 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 480 mJ
I
AR
Avalanche Current (Note 1) 80 A
E
AR
Repetitive Avalanche Energy (Note 1) 17.6 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 176 W
- Derate above 25
o
C1.17
o
CW/
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175
o
C
T
L
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter Ratings Units
R
θJC
Thermal Resistance, Junction to Case, Max.
0.85
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max.
62.5