Data Sheet

FDP80N06 — N-Channel UniFET
TM
MOSFET
©2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FDP80N06 FDP80N06 TO-220
N/A 50 units
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V, T
J
= 25
o
C60 - - V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250µA, Referenced to 25
o
C - 0.075 - V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 60V, V
GS
= 0V - - 1
µA
-V
DS
= 48V, T
C
= 150
o
C -10
I
GSS
Gate to Body Leakage Current V
GS
= ±20V, V
DS
= 0V - - ±100 nA
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 250µA2.0--4.0
V
R
DS(on)
Static Drain to Source On Resistance V
GS
= 10V, I
D
= 40A - 8.5 10 mΩ
g
FS
Forward Transconductance V
DS
= 25V, I
D
= 40A -67-S
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V
f = 1MHz
- 2450 3190 pF
C
oss
Output Capacitance - 910 1190 pF
C
rss
Reverse Transfer Capacitance - 145 190 pF
t
d(on)
Turn-On Delay Time
V
DD
= 30V, I
D
= 80A
R
G
= 25Ω
(Note 4)
-3275ns
t
r
Turn-On Rise Time - 259 528 ns
t
d(off)
Turn-Off Delay Time - 136 282 ns
t
f
Turn-Off Fall Time - 113 236 ns
Q
g(tot)
Total Gate Charge at 10V
V
DS
= 48V, I
D
= 80A
V
GS
= 10V
(Note 4)
-5774nC
Q
gs
Gate to Source Gate Charge - 15 - nC
Q
gd
Gate to Drain “Miller” Charge - 24 - nC
I
S
Maximum Continuous Drain to Source Diode Forward Current - - 80 A
I
SM
Maximum Pulsed Drain to Source Diode Forward Current - - 320 A
V
SD
Drain to Source Diode Forward Voltage V
GS
= 0V, I
SD
= 80A - - 1.4 V
t
rr
Reverse Recovery Time
V
GS
= 0V, I
SD
= 80A
dI
F
/dt = 100A/µs
-64-ns
Q
rr
Reverse Recovery Charge - 127 - nC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature.
2: L = 0.15mH, I
AS
= 80A, V
DD
=
50V, R
G
= 25Ω, Starting T
J
= 25°C.
3: I
SD
≤
80A, di/dt ≤ 200A/µs, V
DD
≤ BV
DSS
, Starting T
J
= 25°C.
4: Essentially independent of operating temperature typical characteristics.
Tube