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FOD8316 — 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing

FOD8316 Rev. 2

October 2017

FOD8316

2.5 A Output Current, IGBT Drive Optocoupler with

Desaturation Detection and Isolated Fault Sensing

Features

• High Noise Immunity Characterized by

Common Mode Rejection – 35 kV/µs Minimum,

= 1500 V

PEAK

• 2.5 A Peak Output Current Driving Capability for Mos

1200 V / 150 A IGBTs

• Optically Isolated Fault Sensing Feedback

• “Soft” IGBT Turn-off

• Built-in IGBT Protection

– Desaturation Detection

– Under-Voltage Lockout (UVLO) Protection

• Wide Supply Voltage Range: 15 V to 30 V

– P-Channel MOSFETs at Output Stage Enables

Output Voltage Swing Close to the Supply Rail

(Rail-to-Rail Output)

• 3.3 V / 5 V, CMOS/TTL Compatible Inputs

• High Speed

– 250 ns Maximum Propagation Delay Over Full

Operating Temperature Range

• Extended Industrial Temperate Range, -40°C to 100°C

• Safety and Regulatory Approvals

– UL1577, 4,243 V

RMS

for 1 Minute

– D

IN EN/IEC 60747-5-5:

1,414 V

PEAK

Working Insulation Voltage Rating

8,000 V

PEAK

Transient Isolation Voltage Rating

• R

DS(ON)

of 1 Ω (Typical) Offers Lower Power

Dissipation

• User-Configurable: Inverting, Non-inverting,

Auto-reset, Auto-shutdown

• 8 mm Creepage and Clearance Distances

Applications

• Industrial Inverter

• Induction Heating

• Isolated IGBT Drive

Description

The FOD8316 is an advanced 2.5 A output current IGBT

drive optocoupler capable of driving most 1200 V /150 A

IGBTs. It is ideally suited for fast-switching driving of

power IGBTs and MOSFETs used in motor-control

inverter applications and high-performance power

systems. The FOD8316 offers critical protection features

necessary for preventing fault conditions that lead to

destructive thermal runaway of IGBTs.

The device utilizes ON’s proprietary Optoplanar

copla-

r packaging technology, and optimized IC design to

achieve high noise immunity, characterized by high

common-mode rejection and power supply rejection

specifications.

The FOD8316 consists of an integrated gate drive opto-

coupler featuring low R

DS(ON)

CMOS transistors to drive

the IGBT from rail-to-rail and an integrated high-speed

isolated feedback for fault sensing. The device is housed

in a compact 16-pin small-outline plastic package which

meets the 8 mm creepage and clearance requirements.

Summary of content (29 pages)

PAGE 1
FOD8316 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Features Description • High Noise Immunity Characterized by Common Mode Rejection – 35 kV/µs Minimum, VCM = 1500 VPEAK The FOD8316 is an advanced 2.5 A output current IGBT drive optocoupler capable of driving most 1200 V /150 A IGBTs. It is ideally suited for fast-switching driving of power IGBTs and MOSFETs used in motor-control inverter applications and high-performance power systems.
PAGE 2
VIN+ VIN– UVLO (VDD2 – VE) X X Active X X LOW X X X Yes LOW LOW LOW X X X X LOW X HIGH X X X LOW HIGH LOW Not Active No HIGH HIGH DESAT Detected? FAULT VO Pin Configuration VIN+ 1 16 VE VIN– 2 15 VLED2+ VDD1 3 14 DESAT GND1 4 13 VDD2 RESET 5 12 VS FAULT 6 11 VO VLED1+ 7 10 VSS VLED1-* 8 9 VSS Figure 1.
PAGE 3
VLED1+ 7 Output IC VDD1 3 13 Input IC VDD2 12 VS VIN+ 1 VIN– 2 FAULT 6 GND1 VLED1– Driver LED1 Gate Drive Optocoupler UVLO 11 VO 4 DESAT 8 Shield 9,10 14 RESET 5 Fault 16 LED2 VSS DESAT VE Fault Sense Optocoupler Shield 15 VLED2+ Figure 2. Functional Block Diagram © Semiconductor Components Industries, LLC, 2010 FOD8316 Rev. 2 www.onsemi.com 3 FOD8316 — 2.
PAGE 4
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings must be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.
PAGE 5
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25ºC unless otherwise specified.
PAGE 6
Apply over all recommended conditions, typical value is measured at TA = 25ºC Symbol Parameter Conditions Min. 4,243 VISO Input-Output Isolation Voltage TA = 25°C, Relative Humidity < 50%, t = 1.0 minute, II-O ≤ 10 µA, 50 Hz(7)(8)(9) RISO Isolation Resistance VI-O = 500 V(7) CISO Isolation Capacitance VI-O = 0 V, Freq = 1.0 MHz(7) Typ. Max. Units VRMS 1011 Ω 1 pF Notes: 7.
PAGE 7
Apply over all recommended conditions, typical value is measured at VDD1 = 5 V, VDD2 – VSS = 30 V, VE – VSS = 0V, and TA = 25°C; unless otherwise specified. Symbol Parameter Conditions Min. Typ. 10 36 Max. IDSCHG Blanking Capacitor Discharge Current VDESAT = 7 V VUVLO+ Under Voltage Lockout Threshold(14) VO > 5 V @ 25°C 10.8 11.7 12.7 VO < 5 V @ 25°C 9.8 10.7 11.7 Under Voltage Lockout Threshold Hysteresis @ 25°C 0.4 1.0 DESAT Threshold(14) VDD2 – VE > VULVO- , VO < 5 V 6.0 6.
PAGE 8
Apply over all recommended conditions, typical value is measured at VDD1 = 5 V, VDD2 – VSS = 30 V, VE – VSS = 0 V, and TA = 25°C; unless otherwise specified. Symbol Parameter tUVLO ON UVLO Turn On Delay(25) tUVLO OFF Delay(26) tGP UVLO Turn Off Time to Good Power(27) Conditions Min. VDD2 = 20V in 1.0ms Ramp VDD2 = 0 to 30V in 10µs Ramp Typ. Max. Units Figure 4 µs 31, 45 3 µs 2.
PAGE 9
IOH - HIGH LEVEL OUTPUT CURRENT (A) IFAULTL - FAULT CURRENT (mA) 50 40 30 20 VDD1 = 5 V VIN+ = 5 V 10 ILED2+ = 10 mA TA = 25 °C 0 0 1 2 3 4 5 7 6 5 VO = VDD2 - 6 V 4 3 VO = VDD2 - 3 V 2 VDD2 - VSS = 30 V 1 VDD1 = 5 V 0 -40 -20 VFAULTL - FAULT VOLTAGE (V) VO = VSS + 6 V 5 4 VO = VSS + 3 V 3 2 VDD2 - VSS = 30 V 1 VDD1 = 5 V 0 -40 -20 0 20 40 60 80 DURING FAULT CONDITION (mA) 6 60 80 100 TA = -40 °C 125 TA = 25 °C TA = 100 °C 100 75 VDD2 - VSS = 30 V VDD1 = 5 V 50 100 0
PAGE 10
VOL - LOW LEVEL OUTPUT VOLTAGE (V) VOH - HIGH LEVEL OUTPUT VOLTAGE (V) 30 29 TA = -40 °C 25 °C 28 100 °C 27 26 VDD2 - VSS = 30 V VDD1 = 5 V VIN+ = 5 V 25 0.0 0.5 1.0 1.5 2.0 2.5 4 VDD2 - VSS = 30 V VDD1 = 5 V 3 VIN+ = 0 V TA = 100 °C 25 °C 2 -40 °C 1 0 0.0 IOH - HIGH LEVEL OUTPUT CURRENT (A) Figure 9. High Level Output Voltage (VOH) vs.
PAGE 11
0.0 3.0 -40°C 25°C 100°C VDD1 = 5 V -0.2 IS - SOURCE CURRENT (mA) IE - SUPPLY CURRENT (mA) VDD2 - VSS = 30 V VIN+ = 0 V (IEL) / 5 V (IEH) IEH -0.4 IEL -0.6 -0.8 -40 2.5 2.0 1.5 1.0 0.5 VDD2 - VSS = 30 V VDD1 = 5 V VIN+ = 5 V -20 0 20 40 60 80 0.0 0.0 100 0.5 TA - TEMPERATURE (°C) Figure 1 . Supply Current (IE) vs. Temperature 2.0 VDESAT - DESAT THRESHOLD (V) 7.0 VUVLO+ THRESHOLD (V) VUVLO - UNDER VOLTAGE LOCKOUT 1.5 Figure 1 . Source Current (IS) vs.
PAGE 12
0.18 VDD2 - VSS = 30 V tPHL - PROPAGATION DELAY (µs) tPLH - PROPAGATION DELAY (µs) 0.20 f = 10 KHz 50% Duty Cycle RL = 10 Ω CL = 10 nF 0.18 0.16 0.14 VDD1 = 4.5 V VDD1 = 5.0 V 0.12 -40 VDD1 = 5.5 V -20 0 20 40 60 80 VDD2 - VSS = 30 V f = 10 KHz 50% Duty Cycle RL = 10 Ω CL = 10 nF 0.16 0.14 0.12 VDD1 = 4.5 V VDD1 = 5.0 V 0.10 -40 100 VDD1 = 5.5 V -20 0 TA - TEMPERATURE (°C) Figure . Propagation Delay Time to Logic High Output (tPLH) vs.
PAGE 13
tDESAT(10%) - DESAT SENSE to 10% VO DELAY (µs) VDD2 - VSS = 30 V FAULT SIGNAL DELAY (µs) BBBBBB tDESAT(FAULT) - DESAT SENSE to LOW LEVEL 1.8 VDD1 = 5 V 1.6 VIN+ = 5 V RL = 10Ω CL = 10 nF 1.4 VE - VSS = 0 V VE - VSS = 15 V 1.2 1.0 0.8 -40 -20 0 20 40 60 80 100 10 VDD1 = 5 V VIN+ = 5 V 8 RL = 10Ω 6 VDD2 - VSS = 30 V 4 VDD2 - VSS = 15 V 2 0 0 5 TA - TEMPERATURE (°C) VIN+ = 5 V CL = 10 nF VDD2 - VSS = 30 V 2.5 2.0 VDD2 - VSS = 15 V 1.5 1.0 0.5 0.
PAGE 14
tGP - TIME TO GOOD POWER (µs) VDD1 = 5 V 1.6 VIN+ = 5 V RL = 10Ω CL = 10 nF 1.4 VE - VSS = 0 V 1.2 1.0 0.8 -40 -20 0 20 40 VDD2 - VSS = 30 V VDD1 = 5 V 4 VIN+ = 5 V f = 50Hz 50% Duty Cycle 3 VE - VSS = 15 V 2 1 0 60 -40 TA - TEMPERATURE (°C) 80 -20 100 0 20 40 tDESAT(10%) - DESAT SENSE to 10% VO DELAY (µs) 5 VDD2 - VSS = 30 V FAULT SIGNAL DELAY (µs) BBBBBB tDESAT(FAULT) - DESAT SENSE to LOW LEVEL 1.
PAGE 15
FOD8316 FOD8316 V 55 V 5V VFAULT ++ –– 0.1 µF µF 0.1 + – 0.1 µF VE 16 A A VIN– VLED2+ 15 A 3 VDD1 DESAT 14 1 VIN+ 2 FOD8316 GND1 5 RESET VS 12 – + 6 FAULT VO 11 7 VLED1+ VSS 10 8 VLED1-* VSS VFAULT = 0.4 V for IFAULTL 0.1 µF 10 mA mA 10 10 mA VDD2 13 4 –– ++ IFAULT 0.1 µF µF 0.1 9 Switch A closed for IFAULTL Switch A opened for IFAULTH VFAULT = 5.0 V for IFAULTH Figure 34.
PAGE 16
FOD8316 — 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Test Circuits (Continued) A FOD8316 A 5V A + – 0.1 µF 5V B B B + – 0.1 µF 5V + – 0.1 µF VE 16 VIN+ 1 FOD8316 VLED2+ 15 VIN– 2 0.1 µF FOD8316 DESAT 14 3 VDD1 4 GND1 5 RESET VS 12 6 FAULT VO 11 7 VLED1+ VSS 10 8 VLED1-* VSS + – + – 0.1 µF VDD2 13 VO 3 kΩ 100 mA pulsed 100 mA pulsed 100 mA pulsed 3 kΩ Switch A for3VkΩ OH test Switch B for VOL test VE 9 0.
PAGE 17
0.1 µF 5V 0.1 µF + – + – 2 VIN– 3 VDD1 4 GND1 5 RESET 6 FOD8316 FOD8316 VE 16 FOD8316VLED2+ VDESAT 15 ICHG/DSCHG DESAT 14 VS 12 FAULT VO 11 VLED1+ VSS 10 VO IOLF 3 kΩ 7 VSS VLED1-* 8 + – + – 0.1 µF VRL 30 V RL 0.1 µF RL RL + – VE 0.1 µF VDD2 13 3 kΩ 3 kΩ 0.1 µF + – + – + – 5V VIN+ + – 5V 0.1 µF 1 + – 30 V 10 0.1 nF µF 30 V 100.1 nFµF 9 + – + – 10 nF Figure 40.
PAGE 18
Low to High Low Low to to High High + + + – – – 5V 55 VV 0.1 µF 0.1 0.1 µF µF + +– + – – 3 kΩ 33 kΩ kΩ VFAULT FOD8316 FOD8316 FOD8316 VE 16 1 VIN+ 2 VIN– VLED2+ 15 3 VDD1 DESAT 14 4 GND1 5 RESET VS 12 6 FAULT VO 11 7 VLED1+ VSS 10 8 VLED1-* VSS 100 pF 100 100 pF pF 0.1 µF 0.1 0.1 µF µF VE + +– + – – VDD2 13 VO RL RL RL 10 nF 10 10 nF nF 0.1 µF 0.1 0.1 µF µF 30 V 30 30 VV + +– + – – 9 Figure 43.
PAGE 19
FOD8316 — 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Test Circuits (Continued) 5V 5V 0.1 µF 0.1 µF 1 kΩ 1 kΩ 300 pF 300 pF FOD8316 FOD8316 VE 16 1 VIN+ 2 VIN– VLED2+ 15 3 VDD1 DESAT 14 VDD2 13 4 GND1 5 RESET VS 12 6 FAULT VO 11 7 VLED1+ VSS 10 8 VLED1-* VSS 0.1 µF 0.1 µF 25 V 25 V SCOPE 10 Ω 10 Ω 10nF 10nF 9 V CM Floating GND Figure 46. Common Mode Low (CML) Test Circuit @ LED1 Off FOD8316 FOD8316 5V 5V 0.1 µF 0.
PAGE 20
FOD8316 — 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Test Circuits (Continued) FOD8316 5V 0.1 µF 1 kΩ SCOPE 300 pF 1 VIN+ VE 16 2 VIN– VLED2+ 15 3 VDD1 DESAT 14 4 GND1 5 RESET VS 12 6 FAULT VO 11 7 VLED1+ VSS 10 10 Ω 8 VLED1-* VSS 10 nF 25 V VDD2 13 0.1 µF 9 VCM Floating GND Figure 48. Common Mode High (CMH) Test Circuit @ LED2 Off FOD8316 5V 0.
PAGE 21
VIN+ 2.5 V VIN– 0V 2.5 V tF tR 90% 50% 10% VO tPLH tPHL Figure 50. Propagation Delay (tPLH, tPHL), Rise Time (tR) and Fall Time (tF) Timing Diagram RESET 50% 7V VDESAT tDESAT (LOW) tRESET (FAULT) 50% tDESAT (90%) 90% VO 10% tDESAT (10%) 50% (0.5 x VDD1) FAULT tDESAT (FAULT) Figure 51. Definitions for Fault Reset Input (RESET), Desaturation Voltage Input (DESAT), Output Voltage (VO) and Fault Output (FAULT) Timing Waveforms © Semiconductor Components Industries, LLC, 2010 FOD8316 Rev.
PAGE 22
1 VIN+ 2 VE 16 VIN– VLED2+ 15 3 VDD1 DESAT 14 4 GND1 VDD2 13 5 RESET VS 12 6 FAULT VO 11 7 VLED1+ VSS 10 8 VLED1- VSS 9 Micro Controller 5 V + 0.1 µF 1 kΩ – 330 pF FOD8316 C2 1 µF C3 10 µF 100 pF 100 Ω C1 1 µF + – + – VF VDD2 = 15 V + Q1 VCE Rg + – D1 DDESAT VSS = –8 V – 3-Phase Output Q2 + VCE – Figure 52. Recommended Application Circuit Functional Description The relationship between the inputs and output are illustrated in the Figure 54.
PAGE 23
4. “Soft” Turn-Off A pair of PMOS and NMOS transistors made up the output driver stage, which facilitates close to rail-to-rail output swing. This feature allows a tight control of gate voltage during on-state and short circuit condition. The output driver is typically capable of sinking 2 A and sourcing 2 A at room temperature. Due to the low RDS(ON) of the MOSFETs, the power dissipation is reduced as compared to those bipolar-type driver output stages.
PAGE 24
available output current. C3 is a low ESR 1812 style, 10 µF, multilayer ceramic capacitor. This capacitor is the primary filter for the Vss and VDD2 supplies. C1 and C2 are also low ESR capacitors. They provide the primary gate charge and discharge paths. The Schottky diode, D1, is connected between VE and VSS to protect against a reverse voltage greater than 0.5 V. VIN– VIN+ VO Figure 54.
PAGE 25
FOD8316 — 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing VIN– 5V VIN+ 0V VUVLO+ VUVLO– VDD2 – VE VO Figure 56. Under Voltage Lockout (UVLO) for Output Side © Semiconductor Components Industries, LLC, 2010 FOD8316 Rev. 2 www.onsemi.
PAGE 26
FOD8316 — 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Ordering Information Part Number Package Packing Method FOD8316 SO 16-Pin Tube (50 units per tube) FOD8316R2 SO 16-Pin Tape and Reel (750 units per reel) FOD8316V SO 16-Pin, DIN EN/IEC 60747-5-5 option Tube (50 units per tube) FOD8316R2V SO 16-Pin, DIN EN/IEC 60747-5-5 option Tape and reel (750 units per reel) All packages are lead free per JEDEC: J-STD-020B standard.
PAGE 27
FOD8316 — 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Reflow Profile Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S Temperature (°C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25°C to Peak Time (seconds) Figure 57.
PAGE 28
0.20 C A-B 1.27 TYP 2X 10.30 16 A 0.64 TYP 9 D 9 7.31 9.47 11.63 16 3.75 10.30 7.50 (2.16) 0.10 C D 2X 8 1 PIN ONE INDICATOR 0.33 C 2X 8 TIPS 1.27 0.51 (16X) 0.31 B 0.51 TYP 0.25 1 8 LAND PATTERN RECOMMENDATION C A-B D A 0.10 C 3.0 MAX 2.35±0.10 0.10 C 16X SEATING PLANE 0.30±0.15 C NOTES: UNLESS OTHERWISE SPECIFIED (1.42) (R0.17) (R0.17) GAUGE PLANE 0.25 0.19 8° 0° 0.25 SEATING PLANE 1.27 0.40 C SCALE: 3:1 A) DRAWING REFERS TO JEDEC MS-013, VARIATION AA.
PAGE 29
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