Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsFETsMOSFET 1 N-channel 135

FQP11N40C / FQPF11N40C — N-Channel QFET

MOSFET

October-2017,Rev.3

Publication Order Number:

FQPF11N40C/D

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FQP11N40C FQPF11N40C Unit

DSS

Drain to Source Voltage

400 V

Drain Current

-Continuous (T

= 25

10.5 10.5 * A

-Continuous (T

= 100

6.6 6.6 * A

Drain Current - Pulsed (Note 1)

42 42 * A

GSS

Gate to Source Voltage

± 30 V

Single Pulsed Avalanche Energy (Note 2)

360 mJ

Avalanche Current (Note 1)

11 A

Repetitive Avalanche Energy (Note 1)

13.5 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

Power Dissipation

= 25

135 44 W

- Derate above 25

1.07 0.35 W/°C

, T

STG

Operating and Storage Temperature Range

-55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300 °C

Symbol Parameter

FQP11N40C FQPF11N40C

Unit

θJC

Thermal Resistance, Junction to Case, Max

0.93 2.86 °C/W

θJA

Thermal Resistance, Junction to Ambient, Max 62.5 62.5 °C/W

*Drain current limited by maximum junction temperature

FQP11N40C / FQPF11N40C

N-Channel QFET

MOSFET

400 V, 10.5 A, 530 mΩ

Features

• 10.5 A, 400 V, R

DS(on)

= 530 mΩ (Max.) @ V

= 10 V,

= 5.25 A

• Low Gate Charge (Typ. 28 nC)

• Low Crss (Typ. 85 pF)

• 100% Avalanche Tested

Description

This N-Channel enhancement mode power MOSFET is

produced using ON Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

TO-220

TO-220F

Summary of content (10 pages)

PAGE 1
N-Channel QFET® MOSFET Description 400 V, 10.5 A, 530 mΩ This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor’s proprietary planar • 10.5 A, 400 V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 28 nC) resistance, and to provide superior switching performance • Low Crss (Typ. 85 pF) and high avalanche energy strength.
PAGE 2
Device Marking FQP11N40C Device FQP11N40C Package TO-220 Reel Size Tube Tape Width N/A Quantity 50 units FQPF11N40C FQPF11N40C TO-220F Tube N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit 400 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : ID, Drain Current [A] 1 10 150°C ID, Drain Current [A] 1 10 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 Notes : 1. 250μs Pulse Test 2. TC = 25°C -55°C 25°C 0 10 Notes : 1. VDS = 40V 2. 250μs Pulse Test -1 -1 10 0 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250μA 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 5.25 A 150 0.0 -100 200 Figure 9-1.
PAGE 5
Figure 11-1. Transient Thermal Response Curve of FQP11N40C 0 D = 0 .5 0 .2 10 N o te s : 1 . Z θ J C ( t) = 0 . 9 3 ° C / W M a x . 0 .1 -1 2 . D u ty F a c to r , D = t1/t2 0 .0 5 3 . T JM - T C = P D M * Z θJC (t) 0 .0 2 PDM 0 .
PAGE 6
FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14.
PAGE 7
DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 7 VDD FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET Figure 15.
PAGE 8
FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering ON Semiconductorcomponents. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision.
PAGE 10
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.