Data Sheet

FQP11N40C / FQPF11N40C — N-Channel QFET
®
MOSFET
www.onsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 5.7 mH, I
AS
= 10.5 A, V
DD
= 50 V, R
G
= 25 Ω, starting T
J
= 25°C.
3. I
SD
≤ 10.5 A, di/dt ≤ 200 A/μs, V
DD
≤ BV
DSS,
starting T
J
= 25°C.
4. Essentially independent of operating temperature.
Device Marking Device Package Reel Size Tape Width Quantity
FQP11N40C FQP11N40C TO-220 Tube N/A 50 units
FQPF11N40C FQPF11N40C TO-220F Tube N/A 50 units
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA 400 -- -- V
ΔBV
DSS
/ ΔT
J
Breakdown Voltage Temperature Coeffi-
cient
I
D
= 250 μA, Referenced to 25°C -- 0.54 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 400 V, V
GS
= 0 V
-- -- 1 μA
V
DS
= 320 V, T
C
= 125°C
-- -- 10 μA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA2.0--4.0V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 5.25 A -- 0.43 0.53 Ω
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 5.25 A -- 7.1 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 840 1090 pF
C
oss
Output Capacitance
-- 250 325 pF
C
rss
Reverse Transfer Capacitance
-- 85 110 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 200 V, I
D
= 10.5 A,
R
G
= 25 Ω
(Note 4)
-- 14 40 ns
t
r
Turn-On Rise Time
-- 89 190 ns
t
d(off)
Turn-Off Delay Time
-- 81 170 ns
t
f
Turn-Off Fall Time
-- 81 170 ns
Q
g
Total Gate Charge
V
DS
= 320 V, I
D
= 10.5 A,
V
GS
= 10 V
(Note 4)
-- 28 35 nC
Q
gs
Gate-Source Charge
-- 4 -- nC
Q
gd
Gate-Drain Charge
-- 15 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
-- -- 10.5 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
-- -- 42 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 10.5 A -- -- 1.4 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 10.5 A,
dI
F
/ dt = 100 A/μs
-- 290 -- ns
Q
rr
Reverse Recovery Charge
-- 2.4 -- μC