Data Sheet

FQP11N40C / FQPF11N40C — N-Channel QFET
®
MOSFET
www.onsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
1. 250
μs Pulse Test
2. T
C
= 25°C
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
246810
10
-1
10
0
10
1
150°C
25°C
-55°C
Notes :
1. V
DS
= 40V
2. 250
μs Pulse Test
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
0 5 10 15 20 25 30 35 40
0.5
1.0
1.5
2.0
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25°C
R
DS(ON)
[Ω],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
-1
10
0
10
1
150°C
Notes :
1
. V
GS
= 0V
2
. 250
μs Pulse Test
25°C
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
1400
1600
1800
2000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
1
. V
GS
= 0 V
2.
f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
0 5 10 15 20 25 30
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Note : I
D
= 10.5A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]