Data Sheet

FQP11N40C / FQPF11N40C — N-Channel QFET
®
MOSFET
www.onsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
of FQP11N40C of FQPF11N40C
F i g u r e 1 0 . M a x i m u m D r a i n C u r r e n t
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250μA
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [°C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1
. V
GS
= 10 V
2
. I
D
= 5.25 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [°C]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
100 ms
10 μs
DC
10 ms
1 ms
100 μs
Operation in This Area
is Limited by R
DS(on)
Notes :
1
. T
C
= 25°C
2
. T
J
= 150°C
3.
Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
100 ms
10 μs
DC
10 ms
1 ms
100 μs
Operation in This Area
is Limited by R
DS(o n)
Notes :
1
. T
C
= 25°C
2
. T
J
= 15°C
3.
Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
25 50 75 100 125 150
0
2
4
6
8
10
12
I
D
, Drain Current [A]
T
C
, Case Temperature [°C]