Data Sheet

November 2013
FQP16N25 — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQP16N25 Rev. C1
www.fairchildsemi.com
1
FQP16N25
N-Channel QFET
®
MOSFET
250 V, 16 A, 230 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
• 16 A, 250 V, R
DS(on)
= 230 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 8.0 A
• Low Gate Charge (Typ. 27 nC)
• Low Crss (Typ. 23 pF)
• 100% Avalanche Tested
TO-220
G
D
S
G
S
D
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQP16N25 Unit
V
DSS
Drain-Source Voltage 250 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
16 A
- Continuous (T
C
= 100°C)
10 A
I
DM
Drain Current - Pulsed
(Note 1)
64 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
560 mJ
I
AR
Avalanche Current
(Note 1)
16 A
E
AR
Repetitive Avalanche Energy
(Note 1)
14.2 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
5.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
142 W
- Derate above 25°C 1.14 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
300 °C
Symbol Parameter FQP16N25 Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 0.88 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W