Data Sheet

November 2013
FQP3N30 — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQP3N30 Rev. C1
www.fairchildsemi.com
1
FQP3N30
N-Channel QFET
®
MOSFET
300 V, 3.2 A, 2.2 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
Features
• 3.2 A, 300 V, R
DS(on)
= 2.2 Ω (Max.) @ V
GS
= 10 V,
I
D
= 1.6 A
• Low Gate Charge (Typ. 5.5 nC)
• Low Crss (Typ. 6 pF)
• 100% Avalanche Tested
TO-220
G
D
S
G
S
D
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQP3N30 Unit
V
DSS
Drain-Source Voltage 300 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
3.2 A
- Continuous (T
C
= 100°C)
2.02 A
I
DM
Drain Current - Pulsed
(Note 1)
12.8 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
140 mJ
I
AR
Avalanche Current
(Note 1)
3.2 A
E
AR
Repetitive Avalanche Energy
(Note 1)
5.5 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
55 W
- Derate above 25°C 0.44 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
300 °C
Symbol Parameter FQP3N30 Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 2.27 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W