Data Sheet

FQP3N30 — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQP3N30 Rev. C1
www.fairchildsemi.com
2
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQP3N30 FQP3N30 TO-220 Tube N/A N/A 50 units
Electrical Characteristics T
C
= 25°C unless otherwise noted.
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 22.5 mH, I
AS
= 3.2 A, V
DD
= 50 V, R
G
= 25 Ω, starting T
J
= 25°C.
3. I
SD
≤ 3.2 A, di/dt ≤ 200 A/μs, V
DD
≤ BV
DSS,
starting T
J
= 25°C.
4. Essentially independent of operating temperature.
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
300 -- -- V
ΔBV
DSS
/ ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, Referenced to 25°C
-- 0.35 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 300 V, V
GS
= 0 V
-- -- 1 μA
V
DS
= 240 V, T
C
= 125°C
-- -- 10 μA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
-- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
-- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
3.0 -- 5.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 1.6 A
-- 1.65 2.2 Ω
g
FS
Forward Transconductance
V
DS
= 50 V, I
D
= 1.6 A
-- 1.75 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 175 230 pF
C
oss
Output Capacitance -- 40 50 pF
C
rss
Reverse Transfer Capacitance -- 6 8 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 150 V, I
D
= 3.2 A,
R
G
= 25 Ω
(Note 4)
-- 10 30 ns
t
r
Turn-On Rise Time -- 40 90 ns
t
d(off)
Turn-Off Delay Time -- 10 30 ns
t
f
Turn-Off Fall Time -- 25 60 ns
Q
g
Total Gate Charge
V
DS
= 240 V, I
D
= 3.2 A,
V
GS
= 10 V
(Note 4)
-- 5.5 7.0 nC
Q
gs
Gate-Source Charge -- 1.5 -- nC
Q
gd
Gate-Drain Charge -- 2.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 3.2 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 12.8 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 3.2 A
-- -- 1.5 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 3.2 A,
dI
F
/ dt = 100 A/μs
-- 120 -- ns
Q
rr
Reverse Recovery Charge -- 0.4 -- μC