Data Sheet

FQP3N80C / FQPF3N80C — N-Channel QFET
®
MOSFET
©2003 Fairchild Semiconductor Corporation
FQP3N80C / FQPF3N80C Rev. C2
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 67 mH, I
AS
= 3.0 A, V
DD
= 50 V, R
G
= 25 starting T
J
= 25°C.
3. I
SD
 3 A, di/dt  200 A/s, V
DD
 BV
DSS,
starting T
J
= 25°C.
4. Essentially independent of operating temperature.
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQP3N80C FQP3N80C TO-220 Tube Tube N/A 50 units
FQPF3N80C FQPF3N80C TO-220F Tube Tube N/A 50 units
Symbol Parameter Test Conditions Min Typ Max Unit

Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
800 -- -- V
BV
DSS
/ T
J
Breakdown Voltage Temperature Coeffi-
cient
I
D
= 250 A, Referenced to 25°C
-- 1 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 800 V, V
GS
= 0 V
-- -- 10 A
V
DS
= 640 V, T
C
= 125°C
-- -- 100 A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
-- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
-- -- -100 nA

On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
3.0 -- 5.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 1.5 A
-- 4.0 4.8 
g
FS
Forward Transconductance
V
DS
= 50 V, I
D
= 1.5 A
-- 3 -- S

Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 543 705 pF
C
oss
Output Capacitance -- 54 70 pF
C
rss
Reverse Transfer Capacitance -- 5.5 7.5 pF

Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 400 V, I
D
= 3 A,
R
G
= 25 
(Note 4)
-- 15 40 ns
t
r
Turn-On Rise Time -- 43.5 95 ns
t
d(off)
Turn-Off Delay Time -- 22.5 55 ns
t
f
Turn-Off Fall Time -- 32 75 ns
Q
g
Total Gate Charge
V
DS
= 640 V, I
D
= 3 A,
V
GS
= 10 V
(Note 4)
-- 13 16.5 nC
Q
gs
Gate-Source Charge -- 3.4 -- nC
Q
gd
Gate-Drain Charge -- 5.8 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 3.0 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 3.0 A
-- -- 1.4 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 3.0 A,
dI
F
/ dt = 100 A/s
-- 642 -- ns
Q
rr
Reverse Recovery Charge -- 4.0 -- C