Data Sheet

FQP3N80C / FQPF3N80C — N-Channel QFET
®
MOSFET
©2003 Fairchild Semiconductor Corporation
FQP3N80C / FQPF3N80C Rev. C2
www.fairchildsemi.com
3
03691215
0
2
4
6
8
10
12
V
DS
= 400V
V
DS
= 160V
V
DS
= 640V
※ Note : I
D
= 3A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
-1
10
0
10
1
150℃
※ Not es :
1. V
GS
= 0V
2. 250s Pulse Test
25℃
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain voltage [V]
02468
2
4
6
8
10
V
GS
= 20V
V
GS
= 10V
※ Note : T
J
= 25℃
R
DS(ON)
[ ],
Drain-Source On-Resistance
I
D
, Drain Current [A]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
※ Notes :
1. 250 s Pulse Test
2. T
C
= 25℃
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
46810
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
※ Notes :
1. V
DS
= 50V
2. 250 s Pulse Test
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]