Data Sheet
FQP3N80C / FQPF3N80C — N-Channel QFET
®
MOSFET
©2003 Fairchild Semiconductor Corporation
FQP3N80C / FQPF3N80C Rev. C2
www.fairchildsemi.com
4
Typical Characteristics (Continued)
Figure 9-1. Maximum Safe Operating Area
for FQP3N80C
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9-2. Maximum Safe Operating Area
for FQPF3N80C
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. V
GS
= 0 V
2. I
D
= 250 A
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. V
GS
= 10 V
2. I
D
= 1.5 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on )
※ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms
100 s
Operat ion in This Area
is Limited by R
DS(on)
※ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
25 50 75 100 125 150
0
1
2
3
4
I
D
, Drain Current [A]
T
C
, Case Temperature [ ]℃
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature