Data Sheet

©2000 Fairchild Semiconductor Corporation
FQP3P20 Rev
. C0
www.fairchildsemi.com
3
FQP3P20 — P-Channel QFET
®
MOSFET
Typical Characteristics
10 3223 76
0
2
4
6
8
10
12
V
DS
= -100V
V
DS
= -40V
V
DS
= -160V

Note : I
D
= -2.8 A
-V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
10
-1 0
10
1
0
100
200
300
400
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
gd
ds
C
oss
= C + C
gd
C
rss
=

Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitances [pF]
10
-V
DS
, Drain-Source Voltage [V]
0.4 0.8 1.2 1.6 2.0 2.4 2.8
10
-1
10
0
10
1
25

150


Notes :
1. V
GS
= 0V
2. 250

s Pulse Test
-I
DR
, Reverse Drain Current [A]
-V
SD
, Source-Drain Voltage [V]
20 64 8
0
2
4
6
8
10

Note : T
J
= 25

V
GS
= - 20V
V
GS
= - 10V
R
DS(on)
[
Ω
],
Drain-Source On-Resistance
-I
D
, Drain Current [A]
42 810
10
-1
10
0
10
1

Notes :
1. V
DS
= -40V
2. 250

s Pulse Test
-55

150

25

-I
D
, Drain Current [A]
6
-V
GS
, Gate-Source Voltage [V]
10
-1 0
10
1
10
-1
10
0
10
1
V
GS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V

Notes :
1. 250

s Pulse Test
2. T
C
= 25

-I
D
, Drain Current [A]
10
-V
DS
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
4
5