Data Sheet

©2000 Fairchild Semiconductor Corporation
FQP3P20 Rev. C0
www.fairchildsemi.com
4
FQP3P20 — P-Channel QFET
®
MOSFET
(Continued)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0

N otes :
1. Z

JC
(t) = 2.4

/W M ax.
2. D uty Factor, D =t
1
/t
2
3. T
JM
P - T
C
=
DM
Z*

JC
(t)
psingle ulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, quare W ave Pulse D uration s[ ec]
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-I
D
, Drain Current [A]
T
C
, Case Temperature [

]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100
µ
s
Operation in This Area
is Limited by R
DS(on)

Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
-I
D
, Drain Current [A]
-V
DS
, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5

Notes :
1. V
GS
= -10 V
2. I
D
= -1.4 A
R
DS( ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2

Notes :
1. V
GS
= 0 V
2. I
D
= -250

A
-BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
Typical Characteristics
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
Z
JC
(t), Thermal Response [
o
C/W]