Data Sheet

2.4
1.47
Thermal Characteristics
FQP3P50
P-Channel QFET
®
MOSFET
-500 V, -2.7 A, 4.9 Ω
Description
©2000 Fairchild Semiconductor Corporation
FQP3P50 Rev.
www.fairchildsemi.com
1
FQP3P50 — P-Channel QFET
®
MOSFET
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
Features
•
-2.7 A, -500 V, R
DS(on)
= 4.9 Ω (Max.) @ V
GS
= -10 V,
I
D
= -1.35 A
•
Low Gate Charge (Typ. 18 nC)
•
Low Crss (Typ 9.5 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
 
FQP3P50

+
θ

Thermal Resistance, Junction-to-Case, Max.
6?
+
θ

Thermal Resistance, Junction-to-Ambient, Max.
-' & 6?
TO-220
G
D
S
G
S
D
Symbol Parameter
FQP3P50
Unit
V
DSS
Drain-Source Voltage -500 V
I
D
Drain Current -2.7 A
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
-1.71 A
I
DM
Drain Current - Pulsed
(Note 1)
-10.8 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
250 mJ
I
AR
Avalanche Current
(Note 1)
-2.7 A
E
AR
Repetitive Avalanche Energy
(Note 1)
8.5 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
-4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
85 W
- Derate above 25°C 0.68 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
300 °C
January 2016