Data Sheet

Package Marking and Ordering Information
www.fairchildsemi.com
2
FQP3P50 — P-Channel QFET
®
MOSFET
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 62 mH, I
AS
= -2.7 A, V
DD
= -50 V, R
G
= 25 Ω, starting T
J
= 25°C.
3.
I
SD
≤ -2.7 A, di/dt ≤ 200 A/µs , V
DD
≤ BV
DSS,
starting T
J
= 25°C.
4.
Essentially independent of operating temperature.
Notes:
Part Number Top Mark
Package Reel Size Tape Width Quantity
TO-220
N/A
N/A
50 units
Packing Method
Tube
(
N ote 4)
( Note 4)
Elerical Characteristics
T
C
= 25°C unless otherwise noted
Symbol Parameter Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 µA
-500 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250 µA, Referenced to 25°C
-- 0.42 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -500 V, V
GS
= 0 V
-- -- -1 µA
V
DS
= -400 V, T
C
= 125°C
-- -- -10 µA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= -30 V, V
DS
= 0 V
-- -- -100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= 30 V, V
DS
= 0 V
-- -- 100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 µA
-3.0 -- -5.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -10 V, I
D
= -1.35 A
-- 3.9 4.9 Ω
g
FS
Forward Transconductance
V
DS
= -50 V, I
D
= -1.35 A
-- 2.35 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 510 660 pF
C
oss
Output Capacitance -- 70 90 pF
C
rss
Reverse Transfer Capacitance -- 9.5 12 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= -250 V, I
D
= -2.7 A,
R
G
= 25 Ω
-- 12 35 ns
t
r
Turn-On Rise Time -- 56 120 ns
t
d(off)
Turn-Off Delay Time -- 35 80 ns
t
f
Turn-Off Fall Time -- 45 100 ns
Q
g
Total Gate Charge
V
DS
= -400 V, I
D
= -2.7 A,
V
GS
= -10 V
-- 18 23 nC
Q
gs
Gate-Source Charge -- 3.6 -- nC
Q
gd
Gate-Drain Charge -- 9.2 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- -2.7 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- -10.8 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -2.7 A
-- -- -5.0 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= -2.7 A,
dI
F
/ dt = 100 A/µs
-- 270 -- ns
Q
rr
Reverse Recovery Charge -- 1.5 -- µC
FQP
3P50
FQP3P50
2.4
©2000 Fairchild Semiconductor Corporation
FQP3P50 Rev.