Data Sheet

©2000 Fairchild Semiconductor Corporation
FQP4P40
Rev. C0
www.fairchildsemi.com
3
FQP4P40 — P-Channel QFET
®
MOSFET
Typical Characteristics
0 2 4 6 8 10 21 41 16 81 20
0
2
4
6
8
10
12
V
DS
= -200V
V
DS
= -80V
V
DS
= -320V
※
Note : I
D
= -3.5 A
-V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
10
-1 0
10
1
0
200
400
600
800
1000
1200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
10
V
DS
, Drain-Source Voltage [V]
0.0 0.5 1.0 1.5 2.0 2.5 3.0
10
-1
10
0
10
1
150
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
℃
-I
DR
, Reverse Drain Current [A]
-V
SD
, Source-Drain Voltage [V]
0030 12
0
2
4
6
8
※
Note : T
J
= 25
℃
V
GS
= - 20V
V
GS
= - 10V
R
DS(on)
[
Ω
],
Drain-Source On-Resistance
-I
D
, Drain Current [A]
2 684 10
10
-1
10
0
10
1
150
℃
25
℃
-55
℃
※
Notes :
1. V
DS
= -50V
2. 250
μ
s Pulse Test
-I
D
, Drain Current [A]
-V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
V
GS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
-I
D
, Drain Current [A]
-V
DS
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics