Data Sheet

FSB50250UTD Motion SPM® 5 Series
©2013 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FSB50250UTD Rev. C4
Absolute Maximum Ratings
Inverter Part (each MOSFET unless otherwise specified.)
Control Part (each HVIC unless otherwise specified.)
Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)
Thermal Resistance
Total System
1st Notes:
1. For the measurement point of case temperature T
C
, please refer to Figure 4.
2. Marking “ * “ is calculation value or design factor.
Symbol Parameter Conditions Rating Unit
V
DSS
Drain-Source Voltage of Each MOSFET 500 V
*I
D 25
Each MOSFET Drain Current, Continuous T
C
= 25°C 1.1 A
*I
D 80
Each MOSFET Drain Current, Continuous T
C
= 80°C 0.8 A
*I
DP
Each MOSFET Drain Current, Peak T
C
= 25°C, PW < 100 s 2.8 A
*P
D
Maximum Power Dissipation T
C
= 25°C, For Each MOSFET 13 W
Symbol Parameter Conditions Rating Unit
V
CC
Control Supply Voltage Applied Between V
CC
and COM 20 V
V
BS
High-side Bias Voltage Applied Between V
B
and V
S
20 V
V
IN
Input Signal Voltage Applied Between IN and COM -0.3 ~ V
CC
+ 0.3 V
Symbol Parameter Conditions Rating Unit
V
RRMB
Maximum Repetitive Reverse Voltage
500
V
* I
FB
Forward Current T
C
= 25°C 0.5 A
* I
FPB
Forward Current (Peak) T
C
= 25°C, Under 1ms Pulse Width
2.0 A
Symbol Parameter Conditions Rating Unit
R
JC
Junction to Case Thermal Resistance
Each MOSFET under Inverter Oper-
ating Condition (1st Note 1)
9.3
°C/W
Symbol Parameter Conditions Rating Unit
T
J
Operating Junction Temperature -40 ~ 150 °C
T
STG
Storage Temperature -40 ~ 125 °C
V
ISO
Isolation Voltage
60 Hz, Sinusoidal, 1 Minute, Con-
nect Pins to Heat Sink Plate
1500 V
rms