Data Sheet
FSB50250UTD Motion SPM® 5 Series
©2013 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
FSB50250UTD Rev. C4
Electrical Characteristics (T
J
= 25°C, V
CC
= V
BS
= 15 V unless otherwise specified.)
Inverter Part (each MOSFET unless otherwise specified.)
Control Part (each HVIC unless otherwise specified.)
Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)
2nd Notes:
1. BV
DSS
is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM
®
5 product. V
PN
should be sufficiently less than this
value considering the effect of the stray inductance so that V
PN
should not exceed BV
DSS
in any case.
2. t
ON
and t
OFF
include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field
applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.
3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test
circuit that is same as the switching test circuit.
4. Built-in bootstrap diode includes around 15Ω resistance characteristic. Please refer to Figure 2.
Symbol Parameter Conditions Min Typ Max Unit
BV
DSS
Drain - Source
Breakdown Voltage
V
IN
= 0 V, I
D
= 250 A (2nd Note 1) 500 - - V
BV
DSS
/
T
J
Breakdown Voltage Tem-
perature Coefficient
I
D
= 250A, Referenced to 25°C - 0.53 - V
I
DSS
Zero Gate Voltage
Drain Current
V
IN
= 0 V, V
DS
= 500 V - - 250 A
R
DS(on)
Static Drain - Source
Turn-On Resistance
V
CC
= V
BS
= 15 V, V
IN
= 5 V, I
D
= 0.5 A - 3.5 4.2
V
SD
Drain - Source Diode
Forward Voltage
V
CC
= V
BS
= 15V, V
IN
= 0 V, I
D
= -0.5 A - - 1.2 V
t
ON
Switching Times
V
PN
= 300 V, V
CC
= V
BS
= 15 V, I
D
= 0.5 A
V
IN
= 0 V 5 V, Inductive Load L = 3 mH
High- and Low-Side MOSFET Switching
(2nd Note 2)
- 1050 - ns
t
OFF
- 850 - ns
t
rr
- 170 - ns
E
ON
-40- J
E
OFF
-10- J
RBSOA
Reverse Bias Safe Oper-
ating Area
V
PN
= 400 V, V
CC
= V
BS
= 15 V, I
D
= I
DP
, V
DS
= BV
DSS
,
T
J
= 150°C
High- and Low-Side MOSFET Switching (2nd Note 3)
Full Square
Symbol Parameter Conditions Min Typ Max Unit
I
QCC
Quiescent V
CC
Current
V
CC
= 15 V,
V
IN
= 0 V
Applied Between V
CC
and COM - - 160 A
I
QBS
Quiescent V
BS
Current
V
BS
= 15 V,
V
IN
= 0 V
Applied Between V
B(U)
- U,
V
B(V)
- V, V
B(W)
- W
- - 100 A
UV
CCD Low-Side Under-Voltage
Protection (Figure 8)
V
CC
Under-Voltage Protection Detection Level 7.4 8.0 9.4 V
UV
CCR
V
CC
Under-Voltage Protection Reset Level 8.0 8.9 9.8 V
UV
BSD
High-Side Under-Voltage
Protection (Figure 9)
V
BS
Under-Voltage Protection Detection Level 7.4 8.0 9.4 V
UV
BSR
V
BS
Under-Voltage Protection Reset Level 8.0 8.9 9.8 V
V
IH
ON Threshold Voltage Logic High Level
Applied between IN and COM
2.9 - - V
V
IL
OFF Threshold Voltage Logic Low Level - - 0.8 V
I
IH
Input Bias Current
V
IN
= 5V
Applied between IN and COM
-1020A
I
IL
V
IN
= 0V - - 2 A
Symbol Parameter Conditions Min Typ Max Unit
V
FB
Forward Voltage I
F
= 0.1 A, T
C
= 25°C (2nd Note 5) - 2.0 - V
t
rrB
Reverse Recovery Time I
F
= 0.1 A, T
C
= 25°C - 80 - ns