Data Sheet

FSB50250UTD Motion SPM® 5 Series
©2013 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com
FSB50250UTD Rev. C4
Recommended Operating Condition
Figure 2. Built-in Bootstrap Diode Characteristics (Typical)
Symbol Parameter Conditions Min. Typ. Max. Unit
V
PN
Supply Voltage Applied Between P and N - 300 400 V
V
CC
Control Supply Voltage Applied Between V
CC
and COM 13.5 15.0 16.5 V
V
BS
High-Side Bias Voltage Applied Between V
B
and V
S
13.5 15.0 16.5 V
V
IN(ON)
Input ON Threshold Voltage
Applied Between IN and COM
3.0 - V
CC
V
V
IN(OFF)
Input OFF Threshold Voltage 0 - 0.6 V
t
dead
Blanking Time for Preventing
Arm-Short
V
CC
= V
BS
= 13.5 ~ 16.5 V, T
J
150°C 1.0 - - s
f
PWM
PWM Switching Frequency T
J
150°C - 15 - kHz
0123456789101112131415
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Built-in Bootstrap Diode V
F
-I
F
Characteristic
I
F
[A]
V
F
[V]
Tc=25°C