Data Sheet

FSB50250UTD Motion SPM® 5 Series
©2013 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
FSB50250UTD Rev. C4
Figure 9. Example of Application Circuit
4th Notes:
1. About pin position, refer to Figure 1.
2. RC-coupling (R
5
and C
5
, R
4
and C
6
) and C
4
at each input of Motion SPM
®
5 product and MCU are useful to prevent improper input signal caused by surge-noise.
3. The voltage-drop across R
3
affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low-
side MOSFET. For this reason, the voltage-drop across R
3
should be less than 1 V in the steady-state.
4. Ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of HVIC.
5. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting high-frequency ripple current.
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
(1) COM
(2) V
B(U)
(3) V
CC(U)
(4) IN
(UH)
(5) IN
(UL)
(6) N.C
(7) V
B(V)
(8) V
CC(V)
(9) IN
(VH)
(10) IN
(VL)
(11) N.C
(12) V
B(W)
(13) V
CC(W)
(14) IN
(WH)
(15) IN
(WL)
(16) N.C
(17) P
(18) U, V
S(U)
(19) N
U
(22) N
W
Micom
C
1
15- V
Supply
C
3
V
DC
C
2
R
3
R
4
C
5
R
5
C
4
For current sensing and protection
(21) V, V
S(V)
(20) N
V
(23) W, V
S(W)
M