Data Sheet

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFR-XS Series • Rev.1.0.2 5
FSFR-XS Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Thermal Impedance
T
A
=25C unless otherwise specified.
Symbol Parameter Value Unit
θ
JC
Junction-to-Case Center Thermal Impedance
(Both MOSFETs Conducting)
FSFR2100XS/L 10.44
ºC/W
FSFR1800XS/L
10.68
FSFR1700XS/L
10.79
FSFR1600XS/L
10.89
θ
JA
Junction-to-Ambient Thermal Impedance
FSFR XS Series
80 ºC/W
Electrical Characteristics
T
A
=25C unless otherwise specified.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
MOSFET Section
BV
DSS
Drain-to-Source Breakdown Voltage
I
D
=200 μA, T
A
=25C
500
V
I
D
=200 μA, T
A
=125C
540
R
DS(ON)
On-State Resistance
FSFR2100XS/L
V
GS
=10 V, I
D
=6.0 A 0.41 0.51

FSFR1800XS/L
V
GS
=10 V, I
D
=3.0 A 0.77 0.95
FSFR1700XS/L
V
GS
=10 V, I
D
=2.0 A 1.00 1.25
FSFR1600XS/L
V
GS
=10 V, I
D
=2.25 A 1.25 1.55
t
rr
Body Diode Reverse
Recovery Time
(6)
FSFR2100XS/L
V
GS
=0 V, I
Diode
=10.5 A,
dI
Diode
/dt=100A/μs
120
ns
FSFR1800XS/L
V
GS
=0V, I
Diode
=7.0A,
dI
Diode
/dt=100 A/μs
160
FSFR1700XS/L
V
GS
=0 V, I
Diode
=6.0 A,
dI
Diode
/dt=100 A/μs
160
FSFR1600XS/L
V
GS
=0 V, I
Diode
=4.5 A,
dI
Diode
/dt=100 A/μs
90
C
ISS
Input Capacitance
(6)
FSFR2100XS/L
V
DS
=25 V, V
GS
=0 V,
f=1.0 MHz
1175 pF
FSFR1800XS/L 639 pF
FSFR1700XS/L 512 pF
FSFR1600XS/L
412 pF
C
OSS
Output Capacitance
(6)
FSFR2100XS/L
V
DS
=25 V, V
GS
=0 V,
f=1.0 MHz
155 pF
FSFR1800XS/L
82.1 pF
FSFR1700XS/L 66.5 pF
FSFR1600XS/L 52.7 pF
Continued on the following page…