Data Sheet

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFR-XS Series • Rev.1.0.2 6
FSFR-XS Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Electrical Characteristics (Continued)
T
A
=25C unless otherwise specified.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Supply Section
I
LK
Offset Supply Leakage Current HV
CC
=V
CTR
=500 V 50 μA
I
Q
HV
CC
Quiescent HV
CC
Supply Current (HV
CC
UV+) - 0.1 V 50 120 μA
I
Q
LV
CC
Quiescent LV
CC
Supply Current (LV
CC
UV+) - 0.1 V 100 200 μA
I
O
HV
CC
Operating HV
CC
Supply Current
(RMS Value)
f
OSC
=100 KHz 6 9 mA
No Switching 100 200 μA
I
O
LV
CC
Operating LV
CC
Supply Current
(RMS Value)
f
OSC
=100 KHz 7 11 mA
No Switching 2 4 mA
UVLO Section
LV
CC
UV+ LV
CC
Supply Under-Voltage Positive Going Threshold (LV
CC
Start) 11.2 12.5 13.8 V
LV
CC
UV- LV
CC
Supply Under-Voltage Negative Going Threshold (LV
CC
Stop) 8.9 10.0 11.1 V
LV
CC
UVH LV
CC
Supply Under-Voltage Hysteresis 2.50 V
HV
CC
UV+ HV
CC
Supply Under-Voltage Positive Going Threshold (HV
CC
Start) 8.2 9.2 10.2 V
HV
CC
UV- HV
CC
Supply Under-Voltage Negative Going Threshold (HV
CC
Stop) 7.8 8.7 9.6 V
HV
CC
UVH HV
CC
Supply Under-Voltage Hysteresis 0.5 V
Oscillator & Feedback Section
V
RT
V-I Converter Threshold Voltage
R
T
=5.2 K
1.5 2.0 2.5 V
f
OSC
Output Oscillation Frequency 94 100 106 KHz
DC Output Duty Cycle 48 50 52 %
f
SS
Internal Soft-Start Initial Frequency
f
SS
=f
OSC
+40 kHz, R
T
=5.2 K
140 KHz
t
SS
Internal Soft-Start Time 2 3 4 ms
Protection Section
V
CssH
Beginning Voltage to Discharge C
SS
0.9 1.0 1.1 V
V
CssL
Beginning Voltage to Charge C
SS
and
Restart
0.16 0.20 0.24 V
V
OVP
LV
CC
Over-Voltage Protection LV
CC
> 21 V 21 23 25 V
V
AOCP
AOCP Threshold Voltage -1.0 -0.9 -0.8 V
t
BAO
AOCP Blanking Time
(6)
V
CS
< V
AOCP
50 ns
V
OCP
OCP Threshold Voltage -0.64 -0.58 -0.52 V
t
BO
OCP Blanking Time
(6)
V
CS
< V
OCP
1.0 1.5 2.0 μs
t
DA
Delay Time (Low Side) Detecting from V
AOCP
to Switch Off
(6)
250 400 ns
T
SD
Thermal Shutdown Temperature
(6)
120 135 150
C
Dead-Time Control Section
D
T
Dead Time
(7)
350 ns
Notes:
6. This parameter, although guaranteed, is not tested in production.
7. These parameters, although guaranteed, are tested only in EDS (wafer test) process.