Datasheet

MBRA160T3G, NRVBA160T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60 V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 105°C)
I
O
1.0
A
Average Rectified Forward Current
(At Rated V
R
, T
C
= 70°C)
I
O
2.1
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
60
A
Storage/Operating Case Temperature T
stg
, T
C
−55 to +150 °C
Operating Junction Temperature (Note 1) T
J
−55 to +150 °C
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JL
R
q
JA
35
86
°C/W
2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(I
F
= 1.0 A)
V
F
T
J
= 25°C T
J
= 125°C
V
0.510 0.475
Maximum Instantaneous Reverse Current
(V
R
= 60 V)
I
R
T
J
= 25°C T
J
= 125°C
mA
0.2 20
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.