Datasheet

MBRD835LG, MBRD835LT4G, SBRD8835LG, SBRD8835LT4G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
35 V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 88°C)
I
F(AV)
8.0
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz, T
C
= 80°C)
I
FRM
16
A
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
I
FSM
75
A
Repetitive Avalanche Current
(Current Decaying Linearly to Zero in 1 s, Frequency Limited by T
Jmax
)
I
AR
2.0
A
Storage / Operating Case Temperature T
stg
−65 to +150 °C
Operating Junction Temperature (Note 1) T
J
−65 to +150 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/s
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R

JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Case
R

JC
2.8 °C/W
Thermal Resistance − Junction−to−Ambient (Note 2)
R

JA
80 °C/W
2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 8 Amps, T
C
= + 25°C)
(i
F
= 8 Amps, T
C
= +125°C)
V
F
0.51
0.41
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
C
= + 25°C)
(Rated dc Voltage, T
C
= +100°C)
I
R
1.4
35
mA
3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2%.