Datasheet

ManualsBrandsON Semiconductor ManualsDiodesSchottky Diode, 1A, 100V, DO-214AA, SMB

March, 2007 − Rev. 9

1 Publication Order Number:

MBRS1100T3/D

MBRS1100T3, MBRS190T3

Preferred Devices

Schottky Power Rectifier

Surface Mount Power Package

Schottky Power Rectifiers employ the use of the Schottky Barrier

principle in a large area metal-to-silicon power diode. State-of-the-art

geometry features epitaxial construction with oxide passivation and

metal overlay contact. Ideally suited for low voltage, high frequency

rectification, or as free wheeling and polarity protection diodes, in

surface mount applications where compact size and weight are critical

to the system. These state-of-the-art devices have the following

features:

Features

• Pb−Free Packages are Available

• Small Compact Surface Mountable Package with J-Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• High Blocking Voltage − 100 Volts

• 175°C Operating Junction Temperature

• Guardring for Stress Protection

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 95 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Shipped in 12 mm Tape and Reel, 2500 units per reel

• Cathode Polarity Band

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage MBRS190T3

MBRS1100T3

RRM

RWM

100

Average Rectified Forward Current

= 163°C

= 148°C

F(AV)

1.0

2.0

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

FSM

50 A

Operating Junction Temperature (Note 1) T

−65 to +175 °C

Voltage Rate of Change dv/dt 10 V/ns

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

Junction−to−Ambient: dP

/dT

< 1/R

SMB

CASE 403A

PLASTIC

SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERE

90, 100 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

MARKING DIAGRAM

AYW

B1xG

http://onsemi.com

B1 = Device Code

x = C for MBRS1100T3

9 for MBRS190T3

A = Assembly Location

Y = Year

W = Work Week

G = Pb−Free Package

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

Summary of content (4 pages)

PAGE 1
MBRS1100T3, MBRS190T3 Preferred Devices Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.
PAGE 2
MBRS1100T3, MBRS190T3 THERMAL CHARACTERISTICS Rating Symbol Value Unit RqJL 22 °C/W Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C) VF 0.75 V Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) IR Thermal Resistance − Junction−to−Lead (TL = 25°C) ELECTRICAL CHARACTERISTICS mA 0.5 5.0 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
PAGE 3
MBRS1100T3, MBRS190T3 1K 400 200 100 40 20 10 4 2 1 0.4 0.2 0.1 0.04 0.02 0.01 20 10 TJ = 150°C 5 2 100°C 1 0.5 25°C 0.2 0.1 0.05 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TJ = 150°C I R , REVERSE CURRENT (μA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS 1 1.1 1.2 1.3 125°C 100°C 25°C 0 10 20 vF, INSTANTANEOUS VOLTAGE (VOLTS) 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2.
PAGE 4
MBRS1100T3, MBRS190T3 PACKAGE DIMENSIONS SMB PLASTIC PACKAGE CASE 403A−03 ISSUE F HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.45 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.