Datasheet

ManualsBrandsON Semiconductor ManualsDiodesSchottky Diode, 3A, 60V, DO-214AB, SMC

February, 2014 − Rev. 9

1 Publication Order Number:

MBRS360T3/D

MBRS360T3G,

MBRS360BT3G,

NRVBS360T3G,

NRVBS360BT3G

Surface Mount

Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity protection diodes, in surface mount

applications where compact size and weight are critical to the system.

Features

• Small Compact Surface Mountable Package with J−Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guard−Ring for Stress Protection

• NRVBS Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These are Pb−Free Devices

Mechanical Characteristics

• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0

• Weight: 217 mg (Approximately), SMC

95 mg (Approximately), SMB

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Polarity: Notch in Plastic Body Indicates Cathode Lead

• Device Meets MSL 1 Requirements

• ESD Ratings:

♦ Machine Model, C

♦ Human Body Model, 3B

Device Package Shipping

†

ORDERING INFORMATION

SMC

CASE 403

SCHOTTKY BARRIER

RECTIFIERS

3.0 AMPERES, 60 VOLTS

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

MBRS360T3G SMC

(Pb−Free)

2,500 /

Tape & Reel

B36 = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAMS

AYWW

B36G

SMB

CASE 403A

AYWW

B36G

MBRS360BT3G SMB

(Pb−Free)

2,500 /

Tape & Reel

NRVBS360T3G SMC

(Pb−Free)

2,500 /

Tape & Reel

2,500 /

Tape & Reel

NRVBS360BT3G SMB

(Pb−Free)

Summary of content (7 pages)

PAGE 1
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. http://onsemi.
PAGE 2
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 60 V Average Rectified Forward Current IF(AV) 3.0 @ TL = 137°C 4.
PAGE 3
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G IR, INSTANTANEOUS REVERSE CURRENT (A) 1.0E+00 1.0E−01 TJ = 175°C 1.0E−02 TJ = 150°C 1.0E−03 TJ = 100°C 1.0E−04 1.0E−05 TJ = 25°C 1.0E−06 1.0E−07 0 10 20 30 40 50 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 60 Figure 3. Typical Reverse Current IR, INSTANTANEOUS REVERSE CURRENT (A) 1.0E+00 1.0E−01 TJ = 175°C TJ = 150°C 1.0E−02 TJ = 100°C 1.0E−03 1.0E−04 TJ = 25°C 1.0E−05 1.
PAGE 4
PFO, AVERAGE POWER DISSIPATION (W) 5 dc 4 SQUARE WAVE 3 2 1 0 RqJL = 15°C/W 0 20 40 60 80 100 120 140 TL, LEAD TEMPERATURE (°C) 160 180 4 TJ = 175°C 3.5 SQUARE WAVE 3 dc 2.5 2 1.5 1 0.5 0 0 0.5 1.5 1 2 TJ = 25°C 100 0 3 3.5 4 4.5 Figure 6. Forward Power Dissipation 1000 10 2.5 IO, AVERAGE FORWARD CURRENT (A) Figure 5.
PAGE 5
r(t), TRANSIENT THERMAL RESPONSE MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G 100 D = 0.5 0.2 10 0.1 P(pk) 0.05 1 0.01 0.1 0.00001 Test Type > min pad 1 oz RqJC = min pad 1 oz C/W t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.0001 0.001 0.1 0.01 10 1 100 1000 t, TIME (s) Figure 8. Thermal Response, Junction−to−Ambient, SMC Package 100 50% Duty Cycle R(t) (°C/W) 10 20% 10% 5% 2% P(pk) 1 1% Test Type > min pad 1 oz RqJC = min pad 1 oz C/W t1 0.
PAGE 6
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G PACKAGE DIMENSIONS SMC CASE 403−03 ISSUE E HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.
PAGE 7
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE H HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.20 2.28 0.10 0.19 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.