Data Sheet

MC78L00A Series, NCV78L00A
www.onsemi.com
7
P
D
, POWER DISSIPATION (mW)
I
IB
, INPUT BIAS CURRENT (mA)
I
IB
, INPUT BIAS CURRENT (mA) V
O
, OUTPUT VOLTAGE (V)
Figure 3. Dropout Characteristics Figure 4. Dropout Voltage versus
Junction Temperature
Figure 5. Input Bias Current versus
Ambient Temperature
Figure 6. Input Bias Current
versus Input Voltage
Figure 7. Maximum Average Power Dissipation versus
Ambient Temperature − TO−92 Type Package
V
I
, INPUT VOLTAGE (V)
0 2.0 4.0 6.0 8.0 10
, INPUT/OUTPUT DIFFERENTIAL VOLTAGE (V)
IO
T
J
, JUNCTION TEMPERATURE (°C)
0 25 50 75 100 125
-VV
Dropout of Regulation is
defined as when
V
O
= 2% of V
O
T
A
, AMBIENT TEMPERATURE (°C)
0 25 50 75 100 125
V
I
, INPUT VOLTAGE (V)
0 5.0 10 15 20 25 30 35 40
T
A
, AMBIENT TEMPERATURE (°C)
25 50 75 100 125 150
No Heatsink
8.0
6.0
4.0
2.0
0
2.5
2.0
1.5
1.0
0.5
0
4.2
4.0
3.8
3.6
3.4
3.2
3.0
0
5.0
4.0
3.0
2.0
1.0
0
10,000
1000
100
10
MC78L05AC
V
out
= 5.0 V
T
J
= 25°C
MC78L05AC
V
out
= 5.0 V
I
O
= 40 mA
T
J
= 25°C
R
q
JA
= 200°C/W
P
D(max)
to 25°C = 625 mW
I
O
= 1.0 mA
I
O
= 40 mA
I
O
= 100 mA
I
O
= 70 mA
I
O
= 1.0 mA
I
O
= 40 mA
MC78L05AC
V
I
= 10 V
V
O
= 5.0 V
I
O
= 40 mA
30
50
70
90
110
130
150
0.4
0.8
1.2
1.6
2.0
2.4
2.8
02030504010
L, LENGTH OF COPPER (mm)
170
3.2
R
q
JA
P
D
R , THERMAL RESISTANCE
JAθ
JUNCTION‐TO‐AIR ( C/W)°
, MAXIMUM POWER DISSIPATION (W)
2.0 oz.
Copper
Graph represents symmetrical layout
3.0 mmL
L
Figure 8. SOIC−8 Thermal Resistance and Maximum
Power Dissipation versus P.C.B. Copper Length
P
D(max)
for T
A
= 50°C