Datasheet

MC7900 Series
http://onsemi.com
4
MC7906C
ELECTRICAL CHARACTERISTICS
(V
I
= −11 V, I
O
= 500 mA, 0°C < T
J
< +125°C, unless otherwise noted.)
Characteristics
Symbol Min Typ Max Unit
Output Voltage (T
J
= +25°C) V
O
5.75 6.0 6.25 Vdc
Line Regulation (Note 3)
(T
J
= +25°C, I
O
= 100 mA)
8.0 Vdc V
I
25 Vdc
−9.0 Vdc V
I
−13 Vdc
(T
J
= +25°C, I
O
= 500 mA)
8.0 Vdc V
I
25 Vdc
9.0 Vdc V
I
−13 Vdc
Reg
line
9.0
3.0
43
10
60
30
120
60
mV
Load Regulation, T
J
= +25°C (Note 3)
5.0 mA I
O
1.5 A
250 mA I
O
750 mA
Reg
load
13
5.0
120
60
mV
Output Voltage
8.0 Vdc V
I
21 Vdc, 5.0 mA I
O
1.0 A, P 15 W
V
O
5.7 6.3
Vdc
Input Bias Current (T
J
= +25°C) I
IB
4.3 8.0 mA
Input Bias Current Change
8.0 Vdc V
I
25 Vdc
5.0 mA I
O
1.5 A
DI
IB
1.3
0.5
mA
Output Noise Voltage (T
A
= +25°C, 10 Hz f 100 kHz) V
n
45
mV
Ripple Rejection (I
O
= 20 mA, f = 120 Hz) RR 65 dB
Dropout Voltage (I
O
= 1.0 A, T
J
= +25°C) V
I
−V
O
1.3 Vdc
Average Temperature Coefficient of Output Voltage
I
O
= 5.0 A, 0°C T
J
+125°C
DV
O
/DT
−1.0
mV/°C
MC7908C
ELECTRICAL CHARACTERISTICS
(V
I
= −14 V, I
O
= 500 mA, 0°C < T
J
< +125°C, unless otherwise noted.)
Characteristics Symbol Min Typ Max Unit
Output Voltage (T
J
= +25°C) V
O
−7.7 8.0 8.3 Vdc
Line Regulation (Note 3)
(T
J
= +25°C, I
O
= 100 mA)
−10.5 Vdc V
I
−25 Vdc
−11 Vdc V
I
−17 Vdc
(T
J
= +25°C, I
O
= 500 mA)
−10.5 Vdc V
I
−25 Vdc
−11 Vdc V
I
−17 Vdc
Reg
line
12
5.0
50
22
80
40
160
80
mV
Load Regulation, T
J
= +25°C (Note 3)
5.0 mA I
O
1.5 A
250 mA I
O
750 mA
Reg
load
26
9.0
160
80
mV
Output Voltage
−10.5 Vdc V
I
23 Vdc, 5.0 mA I
O
1.0 A, P 15 W
V
O
−7.6 8.4
Vdc
Input Bias Current (T
J
= +25°C) I
IB
4.3 8.0 mA
Input Bias Current Change
−10.5 Vdc V
I
25 Vdc
5.0 mA I
O
1.5 A
DI
IB
1.0
0.5
mA
Output Noise Voltage (T
A
= +25°C, 10 Hz f 100 kHz) V
n
52
mV
Ripple Rejection (I
O
= 20 mA, f = 120 Hz) RR 62 dB
Dropout Voltage (I
O
= 1.0 A, T
J
= +25°C) V
I
−V
O
1.3 Vdc
Average Temperature Coefficient of Output Voltage
I
O
= 5.0 mA, 0°C T
J
+125°C
DV
O
/DT
−1.0
mV/°C
3. Load and line regulation are specified at constant junction temperature. Changes in V
O
due to heating effects must be taken into account
separately. Pulse testing with low duty cycle is used.