Data Sheet
MMBF4091/MMBF4092/MMBF4093 — N-Channel Switch
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4091/MMBF4092/MMBF4093 Rev. 1.3 2
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Notes:
3. Device mounted on FR-4 PCB, 1.6” x 1.6” x 0.06”.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol Parameter Max. Unit
P
D
Total Device Dissipation 350 mW
Derate Above 25C2.8mW/C
R
JA
Thermal Resistance, Junction-to-Ambient
(3)
357 C/W
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage I
G
= 1 A, V
DS
= 0 -40 V
V
GS
(off) Gate-Source Cut-Off Voltage
V
DS
= 20 V, I
D
= 1 nA MMBF4091
MMBF4092
MMBF4093
-5.0
-2.0
-1.0
-10.0
-7.0
-5.0
V
I
DGO
Drain-Gate Leakage Current
V
DS
= 20 V, I
s
= 0
V
DS
= 20 V, I
s
= 0, T
A
= 150°C
-200
-400
pA
nA
I
D
( o f f )
Drain Cutoff Leakage Current
V
DS
= 20 V, V
GS
= - 12 V MMBF4091
V
DS
= 20 V, V
GS
= - 8 V MMBF4092
V
DS
= 20 V, V
GS
= - 6 V MMBF4093
V
DS
= 20 V, V
GS
= - 12 V,
T
A
= 150°C MMBF4091
V
DS
= 20 V, V
GS
= - 8 V,
T
A
= 150°C MMBF4092
V
DS
= 20 V, V
GS
= - 6 V,
T
A
= 150°C MMBF4093
200
200
200
400
400
400
pA
pA
pA
nA
nA
nA
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current
(4)
V
DS
= 20 V, I
GS
= 0 MMBF4091
MMBF4092
MMBF4093
30
15
8
mA
V
DS
(on) Drain-Source On Voltage I
D
= 6.6 mA, V
GS
= 0 MMBF4091
I
D
= 4.0 mA, V
GS
= 0 MMBF4092
I
D
= 2.5 mA, V
GS
= 0 MMBF4093
0.2
0.2
0.2
V
r
DS
(on) Drain-Source On Resistance I
D
= 1 mA, V
GS
= 0 MMBF4091
MMBF4092
MMBF4093
30
50
80
Small Signal Characteristics
r
DS
(on)
Drain-Source On Resistance
V
DS
= V
GS
= 0, f = 1 kHz MMBF4091
MMBF4092
MMBF4093
30
50
80
C
iss
Input Capacitance V
DS
= 20 V, V
GS
= 0 V, f = 1.0 MHz 16
pF
C
rss
Reverse Transfer Capacitance V
DS
= -20 V, f = 1.0 MHz 5
pF