Data Sheet

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J109 / MMBFJ108 — N-Channel Switch

Publication Order Number:

J109/D

October-2017, Rev. 3

J109 / MMBFJ108

N-Channel Switch

Features

• This device is designed for digital switching applications

where very low on resistance is mandatory.

• Sourced from process 58

Ordering Information

Absolute Maximum Ratings

(1), (2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state

limits. ON Semiconductor should be consulted on applications involving pulsed or low-

duty-cycle operations.

Figure 1. J109 Device Package Figure 2. MMBFJ108 Device Package

Part Number Top Mark Package Packing Method

J109 J109 TO-92 3L Bulk

J109-D26Z

J109 TO-92 3L Tape and Reel

MMBFJ108 I8 SSOT 3L Tape and Reel

Symbol Parameter Value Unit

Drain-Gate Voltage 25 V

Gate-Source Voltage -25 V

Forward Gate Current 10 mA

, T

STG

Operating and Storage Junction Temperature Range -55 to 150 °C

TO-92

1. Drain 2. Source 3. Gate

SuperSOT-3

Marking: I8

Summary of content (8 pages)

PAGE 1
J109 / MMBFJ108 — N-Channel Switch J109 / MMBFJ108 N-Channel Switch Features • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58 3 2 1 TO-92 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Figure 1. J109 Device Package Figure 2.
PAGE 2
Values are at TA = 25°C unless otherwise noted. Symbol PD Max. Parameter J109 (3) MMBFJ108(4) Unit Total Device Dissipation 625 350 mW Derate Above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction-to-Case 125 RθJA Thermal Resistance, Junction-to-Ambient 200 °C/W °C/W 357 Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 36mm × 18mm × 1.
PAGE 3
Parameter Interactions - DRAIN CURRENT (mA) - 3.0 V 60 40 - 4.0 V T A = 25캜 °C 20 TYP V GS(off) = - 5.0 V I D - 1.0 V - 5.0 V 0 0 0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V) r DS @ V DS = 100mV, VGS = 0 50 V GS(off) @ V DS = 5.0V, I r DS 100 5 50 I DSS _ 2 0.1 10 _ _ _ _ 0.5 1 5 10 VGS (OFF) - GATE CUTOFF VOLTAGE (V) Figure 4. Parameter Interactions 50 100 - DRAIN CURRENT (mA) f = 0.1 - 1.0 MHz C iss (V DS = 5.0V) 10 D C rss (VDS = 0 ) 獤 T A = 25獤 °C TYP V GS(off) = - 0.
PAGE 4
Switching Turn-On Time vs Drain Current Switching Turn-On Time vs Gate-Source Cutoff Voltage 50 t OFF - TURN-OFF TIME (ns) 캜 TA = 25°C VDD = 1.5V 8 V GS(off) = - 12V 6 I D = 30 mA 4 I D = 10 mA 2 0 Ω) r DS - DRAIN "ON" RESISTANCE (Ω V GS = 0 V GS(off) = - 3.0V 獤 125獤 °C 獤 °C 125獤 10 5 獤 °C 25獤 °獤 C - 55獤 V GS(off) = - 5.0V 25獤 °獤 C 1 1 ID 10 - DRAIN CURRENT (mA) 100 Figure 11. On Resistance vs. Drain Current g fs - TRANSCONDUCTANCE (mmhos) V GS(off) = - 3.
PAGE 5
J109 / MMBFJ108 — N-Channel Switch Physical Dimensions D Figure 15. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type www.onsemic.
PAGE 6
J109 / MMBFJ108 — N-Channel Switch Physical Dimensions (Continued) Figure 16. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type www.onsemic.
PAGE 7
J109 / MMBFJ108 — N-Channel Switch Physical Dimensions (Continued) Figure 17. MOLDED PACKAGE, SUPERSOT, 3-LEAD www.onsemic.
PAGE 8
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