Data Sheet

J109 / MMBFJ108 — N-Channel Switch
www.onsemic.com
2
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm
2
.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
Symbol Parameter
Max.
Unit
J109
(3)
MMBFJ108
(4)
P
D
Total Device Dissipation 625 350 mW
Derate Above 25°C 5.0 2.8 mW/°C
R
θJC
Thermal Resistance, Junction-to-Case 125 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 200 357 °C/W
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage I
G
= -10 μA, V
DS
= 0 -25 V
I
GSS
Gate Reverse Current
V
GS
= -15 V, V
DS
= 0 -3.0
nA
V
GS
= -15 V, V
DS
= 0, T
A
= 100°C -200
V
GS
(off) Gate-Source Cut-Off Voltage V
DS
= 15 V, I
D
= 10 nA
MMBFJ108 -3.0 -10.0
V
J109 -2.0 -6.0
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current
(5)
V
DS
= 15 V, V
GS
= 0
MMBFJ108 80
mA
J109 40
r
DS
(on) Drain-Source On Resistance V
DS
≤ 0.1 V, V
GS
= 0
MMBFJ108 8.0
Ω
J109 12
Small Signal Characteristics
C
dg
(on)
C
sg
(off)
Drain-Gate &Source-Gate On
Capacitance
V
DS
= 0, V
GS
= 0, f = 1.0 MHz 85 pF
C
dg
(off) Drain-Gate Off Capacitance V
DS
= 0, V
GS
= -10 V, f = 1.0 MHz 15 pF
C
sg
(off) Source-Gate Off Capacitance V
DS
= 0, V
GS
= -10 V, f = 1.0 MHz 15 pF